Polyimide planarization for RF-MEMS switches on PCB

Bahram Ghodsian; C. Jung; B. A. Cetiner; F. De Flaviis

Polyimide planarization for RF-MEMS switches on PCB

Bahram Ghodsian, C. Jung, B. A. Cetiner, F. De Flaviis

Dept. of Semiconductor Engineering

University of California at Irvine

Research output: Contribution to conference › Paper › peer-review

Abstract

This abstract describes an improved manufacturing technology for fabrication of RF-MEMS switches on PCB. The 17.5μm thick copper layer is patterned and planarized using polyimide. The use of polyimide reduces formation of voids in sacrificial photoresist. Fabricated switches demonstrate low insertion-loss (<0.06dB at l0GHz) and good isolation (>20dB at l0GHz).

Original language	English
Pages	605-606
Number of pages	2
State	Published - 2004
Event	IEEE Sensors 2004 - Vienna, Austria Duration: 24 Oct 2004 → 27 Oct 2004

Conference

Conference	IEEE Sensors 2004
Country/Territory	Austria
City	Vienna
Period	24/10/04 → 27/10/04

Keywords

PCB
Polyimide
RF-MEMS switch

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@conference{3863119dc0624bf69cca7b715ede524c,

title = "Polyimide planarization for RF-MEMS switches on PCB",

abstract = "This abstract describes an improved manufacturing technology for fabrication of RF-MEMS switches on PCB. The 17.5μm thick copper layer is patterned and planarized using polyimide. The use of polyimide reduces formation of voids in sacrificial photoresist. Fabricated switches demonstrate low insertion-loss (<0.06dB at l0GHz) and good isolation (>20dB at l0GHz).",

keywords = "PCB, Polyimide, RF-MEMS switch",

author = "Bahram Ghodsian and C. Jung and Cetiner, \{B. A.\} and \{De Flaviis\}, F.",

year = "2004",

language = "English",

pages = "605--606",

note = "IEEE Sensors 2004 ; Conference date: 24-10-2004 Through 27-10-2004",

}

TY - CONF

T1 - Polyimide planarization for RF-MEMS switches on PCB

AU - Ghodsian, Bahram

AU - Jung, C.

AU - Cetiner, B. A.

AU - De Flaviis, F.

PY - 2004

Y1 - 2004

N2 - This abstract describes an improved manufacturing technology for fabrication of RF-MEMS switches on PCB. The 17.5μm thick copper layer is patterned and planarized using polyimide. The use of polyimide reduces formation of voids in sacrificial photoresist. Fabricated switches demonstrate low insertion-loss (<0.06dB at l0GHz) and good isolation (>20dB at l0GHz).

AB - This abstract describes an improved manufacturing technology for fabrication of RF-MEMS switches on PCB. The 17.5μm thick copper layer is patterned and planarized using polyimide. The use of polyimide reduces formation of voids in sacrificial photoresist. Fabricated switches demonstrate low insertion-loss (<0.06dB at l0GHz) and good isolation (>20dB at l0GHz).

KW - PCB

KW - Polyimide

KW - RF-MEMS switch

UR - http://www.scopus.com/inward/record.url?scp=27944483341&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:27944483341

SP - 605

EP - 606

T2 - IEEE Sensors 2004

Y2 - 24 October 2004 through 27 October 2004

ER -

Polyimide planarization for RF-MEMS switches on PCB

Abstract

Conference

Keywords

UN SDGs

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