Post deposition annealing effect on the properties of Al2O3/InP interface

Hogyoung Kim; Dong Ha Kim; Byung Joon Choi

doi:10.1063/1.5019856

Post deposition annealing effect on the properties of Al₂O₃/InP interface

Hogyoung Kim, Dong Ha Kim, Byung Joon Choi

Seoul National University of Science and Technology (SNUST)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al₂O₃/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al₂O₃ decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al₂O₃/InP interface (into Al₂O₃ layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al₂O₃ during the annealing process should be controlled carefully to optimize the Al₂O₃/InP based devices.

Original language	English
Article number	025211
Journal	AIP Advances
Volume	8
Issue number	2
DOIs	https://doi.org/10.1063/1.5019856
State	Published - 1 Feb 2018

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title = "Post deposition annealing effect on the properties of Al2O3/InP interface",

abstract = "Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.",

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AU - Kim, Dong Ha

AU - Choi, Byung Joon

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N2 - Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

AB - Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

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Post deposition annealing effect on the properties of Al₂O₃/InP interface

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