Post-etch residue removal in BCB/Cu interconnection structure

Hong Young-Tack; Young Il Kim; Moon Chul Lee; Park Sunhee; Shim Dongha; C. M. Park; Byungyou Hong; Yonghan Roh; Sung Hae Jung; Insang Song

doi:10.1016/S0040-6090(03)00332-8

Post-etch residue removal in BCB/Cu interconnection structure

Hong Young-Tack, Young Il Kim, Moon Chul Lee, Park Sunhee, Shim Dongha, C. M. Park, Byungyou Hong, Yonghan Roh, Sung Hae Jung, Insang Song

Dept. of Manufacturing Systems and Design Engineering

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

This article describes the evaluation of post-etch residue removal after descumming BCB (Benzocyclobutene). BCB is widely used in the electronics industry due to its low tangent loss at the high frequency (tan d=10^-3 at 10 GHz). The BCB film is descummed by brief exposure to plasma after curing. The descumming process is necessary to remove the residue that remains after the developing process. O₂/CF₄, in which the ratio of O₂ to CF₄ is 80:20, has been used as etching gas. It is critical to have the low contact resistance between BCB and Cu in the BCB/Cu interconnecting structure. We have tried a few chemicals to make the surface clean for the low contact resistance and found that the EKC chemical is very effective to clean via surface.

Original language	English
Pages (from-to)	238-241
Number of pages	4
Journal	Thin Solid Films
Volume	435
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)00332-8
State	Published - 1 Jul 2003
Event	Proccedings of the Joint International Plasma Symposium - Jeju Island, Korea, Republic of Duration: 1 Jul 2002 → 4 Jul 2002

Keywords

Benzocyclobutene/Cu
Contact resistance
Interconnection
MEMS
Post-etch residue

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10.1016/S0040-6090(03)00332-8

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@article{8680eebb6cf04ef798274a0b36f327af,

title = "Post-etch residue removal in BCB/Cu interconnection structure",

abstract = "This article describes the evaluation of post-etch residue removal after descumming BCB (Benzocyclobutene). BCB is widely used in the electronics industry due to its low tangent loss at the high frequency (tan d=10-3 at 10 GHz). The BCB film is descummed by brief exposure to plasma after curing. The descumming process is necessary to remove the residue that remains after the developing process. O2/CF4, in which the ratio of O2 to CF4 is 80:20, has been used as etching gas. It is critical to have the low contact resistance between BCB and Cu in the BCB/Cu interconnecting structure. We have tried a few chemicals to make the surface clean for the low contact resistance and found that the EKC chemical is very effective to clean via surface.",

keywords = "Benzocyclobutene/Cu, Contact resistance, Interconnection, MEMS, Post-etch residue",

author = "Hong Young-Tack and Kim, \{Young Il\} and Lee, \{Moon Chul\} and Park Sunhee and Shim Dongha and Park, \{C. M.\} and Byungyou Hong and Yonghan Roh and Jung, \{Sung Hae\} and Insang Song",

year = "2003",

month = jul,

day = "1",

doi = "10.1016/S0040-6090(03)00332-8",

language = "English",

volume = "435",

pages = "238--241",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "1-2",

note = "Proccedings of the Joint International Plasma Symposium ; Conference date: 01-07-2002 Through 04-07-2002",

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TY - JOUR

T1 - Post-etch residue removal in BCB/Cu interconnection structure

AU - Young-Tack, Hong

AU - Kim, Young Il

AU - Lee, Moon Chul

AU - Sunhee, Park

AU - Dongha, Shim

AU - Park, C. M.

AU - Hong, Byungyou

AU - Roh, Yonghan

AU - Jung, Sung Hae

AU - Song, Insang

PY - 2003/7/1

Y1 - 2003/7/1

N2 - This article describes the evaluation of post-etch residue removal after descumming BCB (Benzocyclobutene). BCB is widely used in the electronics industry due to its low tangent loss at the high frequency (tan d=10-3 at 10 GHz). The BCB film is descummed by brief exposure to plasma after curing. The descumming process is necessary to remove the residue that remains after the developing process. O2/CF4, in which the ratio of O2 to CF4 is 80:20, has been used as etching gas. It is critical to have the low contact resistance between BCB and Cu in the BCB/Cu interconnecting structure. We have tried a few chemicals to make the surface clean for the low contact resistance and found that the EKC chemical is very effective to clean via surface.

AB - This article describes the evaluation of post-etch residue removal after descumming BCB (Benzocyclobutene). BCB is widely used in the electronics industry due to its low tangent loss at the high frequency (tan d=10-3 at 10 GHz). The BCB film is descummed by brief exposure to plasma after curing. The descumming process is necessary to remove the residue that remains after the developing process. O2/CF4, in which the ratio of O2 to CF4 is 80:20, has been used as etching gas. It is critical to have the low contact resistance between BCB and Cu in the BCB/Cu interconnecting structure. We have tried a few chemicals to make the surface clean for the low contact resistance and found that the EKC chemical is very effective to clean via surface.

KW - Benzocyclobutene/Cu

KW - Contact resistance

KW - Interconnection

KW - MEMS

KW - Post-etch residue

UR - https://www.scopus.com/pages/publications/0038347103

U2 - 10.1016/S0040-6090(03)00332-8

DO - 10.1016/S0040-6090(03)00332-8

M3 - Conference article

AN - SCOPUS:0038347103

SN - 0040-6090

VL - 435

SP - 238

EP - 241

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proccedings of the Joint International Plasma Symposium

Y2 - 1 July 2002 through 4 July 2002

ER -

Post-etch residue removal in BCB/Cu interconnection structure

Abstract

Keywords

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