Properties of Si-doped a-plane GaN grown with different SiH4 flow rates
- Keun Man Song
- , Chang Zoo Kim
- , Jong Min Kim
- , Dae Ho Yoon
- , Sung Min Hwang
- , Hogyoung Kim
- Korea Advanced Nano Fab Center
- Sungkyunkwan University
- Korea Electronics Technology Institute
Research output: Contribution to journal › Article › peer-review
13
Scopus
citations