Abstract
Pt nanopowder-dispersed SiO2 (SOP) films were prepared by RF co-sputtering method using Pt and SiO2targets in Ar atmosphere. The growth rate and Pt content in the film were controlled by means of manipulating the RFpower of Pt target while that of SiO2 was fixed. The roughness of the film was increased with increasing the power ofPt target, which was mainly due to the increment of the size and planar density of Pt nanopowder. It was revealed thatSOP film formed at 10, 15, 20 W of Pt power contained 2.3, 2.7, and 3.0 nm of spherical Pt nanopowder, respectively.
Electrical conductivity of SOP films was exponentially increased with increasing Pt power as one can expect. Interestingly,conductivity of SOP films from Hall effect measurement was greater than that from DC I-V measurement, whichwas explained by the significant increase of electron density.
Electrical conductivity of SOP films was exponentially increased with increasing Pt power as one can expect. Interestingly,conductivity of SOP films from Hall effect measurement was greater than that from DC I-V measurement, whichwas explained by the significant increase of electron density.
| Translated title of the contribution | Controlling Structural and Electrical Properties of Pt Nanopowder-Dispersed SiO2 Film |
|---|---|
| Original language | Korean |
| Pages (from-to) | 355-359 |
| Number of pages | 5 |
| Journal | 한국분말야금학회지 |
| Volume | 21 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2014 |