Pulsed-chemical vapor deposition of ruthenium and ruthenium dioxide thin films using RuO4 precursor for the DRAM capacitor electrode

Jeong Hwan Han; Sang Woon Lee; Gyu Jin Choi; Sang Young Lee; Cheol Seong Hwang; Christian Dussarrat; Julien Gatineau

doi:10.1149/1.3122127

Pulsed-chemical vapor deposition of ruthenium and ruthenium dioxide thin films using RuO₄ precursor for the DRAM capacitor electrode

Jeong Hwan Han, Sang Woon Lee, Gyu Jin Choi, Sang Young Lee, Cheol Seong Hwang, Christian Dussarrat, Julien Gatineau

Dept. of Materials Science & Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Ru and RuO₂ thin films were grown on Si, SiO₂ and TiN substrates by pulsed chemical vapor deposition using RuO₄ and 5%H.2/95%N₂ as the precursor and reducing gas, respectively. Ru film showed an excellent thermal stability, high growth rate of 0.18nm/pulse (0.43nm/min), low impurity concentration, conformal step coverage and very smooth surface. The TiO₂ film grown on this Ru electrode showed much improved electrical performance compared to those on the other Ru electrode. RuO₂ thin film can be deposited by decreasing the H ₂/N₂ gas supply rate. RuO₂ thin film has excellent conformal step coverage on a hole structure with an opening diameter of 100nm and a depth of 1000nm. With RuO₂ thin film as sub-electrode of MIM capacitor, the equivalent oxide thickness of TiO₂ film could be decreased to 0.56nm within the specification of DRAM leakage current.

Original language	English
Title of host publication	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
Publisher	Electrochemical Society Inc.
Pages	717-728
Number of pages	12
Edition	2
ISBN (Electronic)	9781607680604
ISBN (Print)	9781566777100
DOIs	https://doi.org/10.1149/1.3122127
State	Published - 2009
Event	International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States Duration: 24 May 2009 → 29 May 2009

Publication series

Name	ECS Transactions
Number	2
Volume	19
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society
Country/Territory	United States
City	San Francisco, CA
Period	24/05/09 → 29/05/09

Access to Document

10.1149/1.3122127

Cite this

Han, J. H., Lee, S. W., Choi, G. J., Lee, S. Y., Hwang, C. S., Dussarrat, C., & Gatineau, J. (2009). Pulsed-chemical vapor deposition of ruthenium and ruthenium dioxide thin films using RuO₄ precursor for the DRAM capacitor electrode. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10 (2 ed., pp. 717-728). (ECS Transactions; Vol. 19, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.3122127

@inproceedings{f808fbf8e91b48f282d50bdcd7322087,

title = "Pulsed-chemical vapor deposition of ruthenium and ruthenium dioxide thin films using RuO4 precursor for the DRAM capacitor electrode",

abstract = "Ru and RuO2 thin films were grown on Si, SiO2 and TiN substrates by pulsed chemical vapor deposition using RuO4 and 5\%H.2/95\%N2 as the precursor and reducing gas, respectively. Ru film showed an excellent thermal stability, high growth rate of 0.18nm/pulse (0.43nm/min), low impurity concentration, conformal step coverage and very smooth surface. The TiO2 film grown on this Ru electrode showed much improved electrical performance compared to those on the other Ru electrode. RuO2 thin film can be deposited by decreasing the H 2/N2 gas supply rate. RuO2 thin film has excellent conformal step coverage on a hole structure with an opening diameter of 100nm and a depth of 1000nm. With RuO2 thin film as sub-electrode of MIM capacitor, the equivalent oxide thickness of TiO2 film could be decreased to 0.56nm within the specification of DRAM leakage current.",

author = "Han, \{Jeong Hwan\} and Lee, \{Sang Woon\} and Choi, \{Gyu Jin\} and Lee, \{Sang Young\} and Hwang, \{Cheol Seong\} and Christian Dussarrat and Julien Gatineau",

year = "2009",

doi = "10.1149/1.3122127",

language = "English",

isbn = "9781566777100",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "717--728",

booktitle = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10",

edition = "2",

note = "International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society ; Conference date: 24-05-2009 Through 29-05-2009",

}

Han, JH, Lee, SW, Choi, GJ, Lee, SY, Hwang, CS, Dussarrat, C & Gatineau, J 2009, Pulsed-chemical vapor deposition of ruthenium and ruthenium dioxide thin films using RuO₄ precursor for the DRAM capacitor electrode. in Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10. 2 edn, ECS Transactions, no. 2, vol. 19, Electrochemical Society Inc., pp. 717-728, International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society, San Francisco, CA, United States, 24/05/09. https://doi.org/10.1149/1.3122127

Pulsed-chemical vapor deposition of ruthenium and ruthenium dioxide thin films using RuO₄ precursor for the DRAM capacitor electrode. / Han, Jeong Hwan; Lee, Sang Woon; Choi, Gyu Jin et al.
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10. 2. ed. Electrochemical Society Inc., 2009. p. 717-728 (ECS Transactions; Vol. 19, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Pulsed-chemical vapor deposition of ruthenium and ruthenium dioxide thin films using RuO4 precursor for the DRAM capacitor electrode

AU - Han, Jeong Hwan

AU - Lee, Sang Woon

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AU - Lee, Sang Young

AU - Hwang, Cheol Seong

AU - Dussarrat, Christian

AU - Gatineau, Julien

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N2 - Ru and RuO2 thin films were grown on Si, SiO2 and TiN substrates by pulsed chemical vapor deposition using RuO4 and 5%H.2/95%N2 as the precursor and reducing gas, respectively. Ru film showed an excellent thermal stability, high growth rate of 0.18nm/pulse (0.43nm/min), low impurity concentration, conformal step coverage and very smooth surface. The TiO2 film grown on this Ru electrode showed much improved electrical performance compared to those on the other Ru electrode. RuO2 thin film can be deposited by decreasing the H 2/N2 gas supply rate. RuO2 thin film has excellent conformal step coverage on a hole structure with an opening diameter of 100nm and a depth of 1000nm. With RuO2 thin film as sub-electrode of MIM capacitor, the equivalent oxide thickness of TiO2 film could be decreased to 0.56nm within the specification of DRAM leakage current.

AB - Ru and RuO2 thin films were grown on Si, SiO2 and TiN substrates by pulsed chemical vapor deposition using RuO4 and 5%H.2/95%N2 as the precursor and reducing gas, respectively. Ru film showed an excellent thermal stability, high growth rate of 0.18nm/pulse (0.43nm/min), low impurity concentration, conformal step coverage and very smooth surface. The TiO2 film grown on this Ru electrode showed much improved electrical performance compared to those on the other Ru electrode. RuO2 thin film can be deposited by decreasing the H 2/N2 gas supply rate. RuO2 thin film has excellent conformal step coverage on a hole structure with an opening diameter of 100nm and a depth of 1000nm. With RuO2 thin film as sub-electrode of MIM capacitor, the equivalent oxide thickness of TiO2 film could be decreased to 0.56nm within the specification of DRAM leakage current.

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BT - Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10

PB - Electrochemical Society Inc.

T2 - International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society

Y2 - 24 May 2009 through 29 May 2009

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