Purely electronic switching with high uniformity, resistance tunability, and good retention in Pt-dispersed Sio2 thin films for ReRAM

Byung Joon Choi; Albert B.K. Chen; Xiang Yang; I. Wei Chen

doi:10.1002/adma.201102132

Purely electronic switching with high uniformity, resistance tunability, and good retention in Pt-dispersed Sio₂ thin films for ReRAM

Byung Joon Choi
, Albert B.K. Chen
, Xiang Yang
, I. Wei Chen

Dept. of Materials Science & Engineering

University of Pennsylvania

Research output: Contribution to journal › Article › peer-review

110 Scopus citations

Abstract

Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO₂ thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.

Original language	English
Pages (from-to)	3847-3852
Number of pages	6
Journal	Advanced Materials
Volume	23
Issue number	33
DOIs	https://doi.org/10.1002/adma.201102132
State	Published - 1 Sep 2011

Keywords

charge transport
data storage
electronic processes
electronic structures
hybrid materials
thin films

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abstract = "Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.",

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AU - Yang, Xiang

AU - Chen, I. Wei

PY - 2011/9/1

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N2 - Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.

AB - Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.

KW - charge transport

KW - data storage

KW - electronic processes

KW - electronic structures

KW - hybrid materials

KW - thin films

UR - https://www.scopus.com/pages/publications/80052154799

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DO - 10.1002/adma.201102132

M3 - Article

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ER -

Purely electronic switching with high uniformity, resistance tunability, and good retention in Pt-dispersed Sio₂ thin films for ReRAM

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Keywords

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