Abstract
We report the fabrication of p-SnO2 thin films by spray pyrolysis deposition using europium (Eu) as an acceptor. Structural and chemical investigations verified that Eu3+ ions were successfully incorporated into the SnO2 crystal by substituting the Sn4+ sites in the lattice. Even though the undoped SnO2 thin film showed n-type properties with a charge carrier concentration of −2.343 × 1018 cm−3, SnO2 showed p-type properties as the Eu was incorporated. In addition, the charge carrier concentration of the Eu-doped SnO2 increased to 9.121 × 1019 cm−3 as the molar content of the Eu source was increased to 0.2 mM. The optical transmittance was not degraded by the Eu doping and was maintained between 70 and 80% in the visible wavelength spectral range, while the optical band gap of the Eu-doped SnO2 increased due to the Burstein-Moss effect. The thin film field-effect transistor fabricated by using the Eu-doped SnO2 showed the typical gate-modulated drain current characteristic of a p-channel transistor with depletion mode. These results demonstrated the effectiveness of Eu as a dopant for p-SnO2.
Original language | English |
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Pages (from-to) | 430-434 |
Number of pages | 5 |
Journal | Ceramics International |
Volume | 46 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2020 |
Keywords
- Eu-doping
- Spray pyrolysis deposition
- Thin film field-effect transistor
- Tin oxide
- p-type semiconductor