Abstract
Neuromorphic computing, which mimics the functionality of human neural networks, has gained attention as a next-generation computing approach due to its advantages in high-speed data processing and low power consumption. As a result, extensive research has been conducted on synaptic transistors to realize this technology. Among them, electrolyte-gated organic synaptic transistors (EGOSTs) stand out due to their ability to regulate channel conductivity at ultra-low operating voltages, making them a crucial component for high-performance neuromorphic hardware. Channel modulation strategies play an essential role in enhancing synaptic performance by reducing dependence on external factors and enabling precise conductivity control, which is critical for developing high-performance EGOSTs. This review provides an overview of the fundamental operating principles of EGOSTs and explores various channel modulation strategies, concluding discussions on future advancements and technical challenges.
| Original language | English |
|---|---|
| Pages (from-to) | 2455-2466 |
| Number of pages | 12 |
| Journal | Korean Journal of Chemical Engineering |
| Volume | 42 |
| Issue number | 11 |
| DOIs | |
| State | Published - Sep 2025 |
Keywords
- Channel modulation
- Electrolyte-gated organic synaptic transistors
- Memtransistors
- Neuromorphic computing
- Organic electrochemical transistors
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