Refined wide band modelling and design of CMOS-compatible spiral inductors with BCB dielectric layer

Yuri Tikhov; Dongha Shim; Kuang Woo Nam; Insang Song

doi:10.1109/EUMC.2003.1262217

Refined wide band modelling and design of CMOS-compatible spiral inductors with BCB dielectric layer

Yuri Tikhov, Dongha Shim, Kuang Woo Nam, Insang Song

Dept. of Manufacturing Systems and Design Engineering

Samsung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper discloses a new measurement-based model of on-chip spiral inductor with BCB dielectric layer. The parameters of refined equivalent circuit are extracted through an optimisation with respect to specially formulated objective function. Accurate modelling of fabricated high-Q inductors validates the proposed approach over a wide band from 100 MHz to 20 GHz.

Original language	English
Title of host publication	Conference Proceedings - 33rd European Microwave Conference, EuMC 2003
Publisher	IEEE Computer Society
Pages	57-60
Number of pages	4
ISBN (Print)	1580538347, 9781580538343
DOIs	https://doi.org/10.1109/EUMC.2003.1262217
State	Published - 2003
Event	33rd European Microwave Conference, EuMC 2003 - Munich, Germany Duration: 7 Oct 2003 → 7 Oct 2003

Publication series

Name	Conference Proceedings - 33rd European Microwave Conference, EuMC 2003
Volume	1

Conference

Conference	33rd European Microwave Conference, EuMC 2003
Country/Territory	Germany
City	Munich
Period	7/10/03 → 7/10/03

Access to Document

10.1109/EUMC.2003.1262217

Cite this

Tikhov, Y., Shim, D., Nam, K. W., & Song, I. (2003). Refined wide band modelling and design of CMOS-compatible spiral inductors with BCB dielectric layer. In Conference Proceedings - 33rd European Microwave Conference, EuMC 2003 (pp. 57-60). Article 1262217 (Conference Proceedings - 33rd European Microwave Conference, EuMC 2003; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/EUMC.2003.1262217

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title = "Refined wide band modelling and design of CMOS-compatible spiral inductors with BCB dielectric layer",

abstract = "This paper discloses a new measurement-based model of on-chip spiral inductor with BCB dielectric layer. The parameters of refined equivalent circuit are extracted through an optimisation with respect to specially formulated objective function. Accurate modelling of fabricated high-Q inductors validates the proposed approach over a wide band from 100 MHz to 20 GHz.",

author = "Yuri Tikhov and Dongha Shim and Nam, {Kuang Woo} and Insang Song",

year = "2003",

doi = "10.1109/EUMC.2003.1262217",

language = "English",

isbn = "1580538347",

series = "Conference Proceedings - 33rd European Microwave Conference, EuMC 2003",

publisher = "IEEE Computer Society",

pages = "57--60",

booktitle = "Conference Proceedings - 33rd European Microwave Conference, EuMC 2003",

note = "33rd European Microwave Conference, EuMC 2003 ; Conference date: 07-10-2003 Through 07-10-2003",

}

Tikhov, Y, Shim, D, Nam, KW & Song, I 2003, Refined wide band modelling and design of CMOS-compatible spiral inductors with BCB dielectric layer. in Conference Proceedings - 33rd European Microwave Conference, EuMC 2003., 1262217, Conference Proceedings - 33rd European Microwave Conference, EuMC 2003, vol. 1, IEEE Computer Society, pp. 57-60, 33rd European Microwave Conference, EuMC 2003, Munich, Germany, 7/10/03. https://doi.org/10.1109/EUMC.2003.1262217

Refined wide band modelling and design of CMOS-compatible spiral inductors with BCB dielectric layer. / Tikhov, Yuri; Shim, Dongha; Nam, Kuang Woo et al.
Conference Proceedings - 33rd European Microwave Conference, EuMC 2003. IEEE Computer Society, 2003. p. 57-60 1262217 (Conference Proceedings - 33rd European Microwave Conference, EuMC 2003; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - This paper discloses a new measurement-based model of on-chip spiral inductor with BCB dielectric layer. The parameters of refined equivalent circuit are extracted through an optimisation with respect to specially formulated objective function. Accurate modelling of fabricated high-Q inductors validates the proposed approach over a wide band from 100 MHz to 20 GHz.

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Refined wide band modelling and design of CMOS-compatible spiral inductors with BCB dielectric layer

Abstract

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Conference

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