Reliability of hermetic RF MEMS wafer level packaging using Au-Sn eutectic bonding

Qian Wang; Sung Hoon Choa; Woon Bae Kim; Junsik Hwang; Sukjin Ham; Changyoul Moon

doi:10.4028/0-87849-415-4.609

Reliability of hermetic RF MEMS wafer level packaging using Au-Sn eutectic bonding

Qian Wang, Sung Hoon Choa, Woon Bae Kim, Junsik Hwang, Sukjin Ham, Changyoul Moon

Dept. of Semiconductor Engineering

Samsung

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 μm in width is performed. The size of the MEMS package is 1mm × 1mm × 700 μm. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.

Original language	English
Pages (from-to)	609-612
Number of pages	4
Journal	Key Engineering Materials
Volume	326-328 I
DOIs	https://doi.org/10.4028/0-87849-415-4.609
State	Published - 2006

Keywords

Au-sn bonding
Hermeticity
RF-MEMS
Wafer level packaging

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10.4028/0-87849-415-4.609

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title = "Reliability of hermetic RF MEMS wafer level packaging using Au-Sn eutectic bonding",

abstract = "In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 μm in width is performed. The size of the MEMS package is 1mm × 1mm × 700 μm. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.",

keywords = "Au-sn bonding, Hermeticity, RF-MEMS, Wafer level packaging",

author = "Qian Wang and Choa, \{Sung Hoon\} and Kim, \{Woon Bae\} and Junsik Hwang and Sukjin Ham and Changyoul Moon",

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AU - Wang, Qian

AU - Choa, Sung Hoon

AU - Kim, Woon Bae

AU - Hwang, Junsik

AU - Ham, Sukjin

AU - Moon, Changyoul

PY - 2006

Y1 - 2006

N2 - In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 μm in width is performed. The size of the MEMS package is 1mm × 1mm × 700 μm. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.

AB - In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 μm in width is performed. The size of the MEMS package is 1mm × 1mm × 700 μm. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.

KW - Au-sn bonding

KW - Hermeticity

KW - RF-MEMS

KW - Wafer level packaging

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VL - 326-328 I

SP - 609

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JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Reliability of hermetic RF MEMS wafer level packaging using Au-Sn eutectic bonding

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Keywords

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