TY - GEN
T1 - Research on the Crystallinity of Metal Passivation Layer for Improving Low-Temperature Copper Bonding Performance
AU - Jeong, Min Seong
AU - Park, Jong Kyung
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - The study of copper bonding for hybrid bonding is crucial for high-performance devices; however, copper, which is easily oxidized, faces challenges in low-temperature bonding. Metal passivation of copper bonding has emerged as an appropriate solution to address these issues. This research compares the properties of metal passivation layers (titanium, platinum, tantalum, chromium) that protect the copper layer from native oxidation, and investigates their diffusion behavior and the underlying causes. The effects of copper diffusion on grain size and surface roughness are compared, along with the identification of additional factors. It was found that the crystallinity of the metal passivation layer aligns more closely with the trends in diffusion behavior than grain size and surface roughness. The interfaces after the actual bonding process were examined for metal passivation specimens with different crystallinities. Differences in diffusion behavior based on crystallinity were consistent with XPS results across various conditions, including bonding temperature, ramp-up, and pressure. Further experiments were conducted to investigate the influence of crystallinity on diffusion behavior in greater detail. The deposition methods were varied to alter the crystallinity of the passivation metals, and factors including grain size and surface roughness were compared. Additionally, bonding and diffusion experiments were performed to observe the behavior. This research aims to enhance the understanding of copper bonding and is expected to positively influence advanced packaging applications such as hybrid bonding.
AB - The study of copper bonding for hybrid bonding is crucial for high-performance devices; however, copper, which is easily oxidized, faces challenges in low-temperature bonding. Metal passivation of copper bonding has emerged as an appropriate solution to address these issues. This research compares the properties of metal passivation layers (titanium, platinum, tantalum, chromium) that protect the copper layer from native oxidation, and investigates their diffusion behavior and the underlying causes. The effects of copper diffusion on grain size and surface roughness are compared, along with the identification of additional factors. It was found that the crystallinity of the metal passivation layer aligns more closely with the trends in diffusion behavior than grain size and surface roughness. The interfaces after the actual bonding process were examined for metal passivation specimens with different crystallinities. Differences in diffusion behavior based on crystallinity were consistent with XPS results across various conditions, including bonding temperature, ramp-up, and pressure. Further experiments were conducted to investigate the influence of crystallinity on diffusion behavior in greater detail. The deposition methods were varied to alter the crystallinity of the passivation metals, and factors including grain size and surface roughness were compared. Additionally, bonding and diffusion experiments were performed to observe the behavior. This research aims to enhance the understanding of copper bonding and is expected to positively influence advanced packaging applications such as hybrid bonding.
UR - https://www.scopus.com/pages/publications/85216930194
U2 - 10.1109/IMPACT63555.2024.10818933
DO - 10.1109/IMPACT63555.2024.10818933
M3 - Conference contribution
AN - SCOPUS:85216930194
T3 - Proceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
SP - 111
EP - 114
BT - Proceedings - 19th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2024
PB - IEEE Computer Society
T2 - 19th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2024
Y2 - 22 October 2024 through 25 October 2024
ER -