Reset-voltage-dependent precise tuning operation of TiOx/Al2O3memristive crossbar array

Tae Hyeon Kim; Hussein Nili; Min Hwi Kim; Kyung Kyu Min; Byung Gook Park; Hyungjin Kim

doi:10.1063/5.0021626

Reset-voltage-dependent precise tuning operation of TiO_x/Al₂O₃memristive crossbar array

Tae Hyeon Kim, Hussein Nili, Min Hwi Kim, Kyung Kyu Min, Byung Gook Park, Hyungjin Kim

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

In this Letter, we present reset-voltage-dependent precise tuning operation of TiO_x/Al₂O₃-based memristive devices. For the high resistance state (HRS) with high reset voltage, abrupt set operations are observed with a large variation, while the HRS obtained by low reset voltage provides gradual and uniform switching behaviors. The improvement of gradual switching and the programming accuracy are analyzed regarding cycle-to-cycle as well as device-to-device variations. We believe that these results can be applied to operate TiO_x/Al₂O₃-based memristors in areas requiring highly accurate tuning characteristics.

Original language	English
Article number	152103-1
Journal	Applied Physics Letters
Volume	117
Issue number	15
DOIs	https://doi.org/10.1063/5.0021626
State	Published - 12 Oct 2020

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10.1063/5.0021626

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title = "Reset-voltage-dependent precise tuning operation of TiOx/Al2O3memristive crossbar array",

abstract = "In this Letter, we present reset-voltage-dependent precise tuning operation of TiOx/Al2O3-based memristive devices. For the high resistance state (HRS) with high reset voltage, abrupt set operations are observed with a large variation, while the HRS obtained by low reset voltage provides gradual and uniform switching behaviors. The improvement of gradual switching and the programming accuracy are analyzed regarding cycle-to-cycle as well as device-to-device variations. We believe that these results can be applied to operate TiOx/Al2O3-based memristors in areas requiring highly accurate tuning characteristics.",

author = "Kim, \{Tae Hyeon\} and Hussein Nili and Kim, \{Min Hwi\} and Min, \{Kyung Kyu\} and Park, \{Byung Gook\} and Hyungjin Kim",

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doi = "10.1063/5.0021626",

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T1 - Reset-voltage-dependent precise tuning operation of TiOx/Al2O3memristive crossbar array

AU - Kim, Tae Hyeon

AU - Nili, Hussein

AU - Kim, Min Hwi

AU - Min, Kyung Kyu

AU - Park, Byung Gook

AU - Kim, Hyungjin

PY - 2020/10/12

Y1 - 2020/10/12

N2 - In this Letter, we present reset-voltage-dependent precise tuning operation of TiOx/Al2O3-based memristive devices. For the high resistance state (HRS) with high reset voltage, abrupt set operations are observed with a large variation, while the HRS obtained by low reset voltage provides gradual and uniform switching behaviors. The improvement of gradual switching and the programming accuracy are analyzed regarding cycle-to-cycle as well as device-to-device variations. We believe that these results can be applied to operate TiOx/Al2O3-based memristors in areas requiring highly accurate tuning characteristics.

AB - In this Letter, we present reset-voltage-dependent precise tuning operation of TiOx/Al2O3-based memristive devices. For the high resistance state (HRS) with high reset voltage, abrupt set operations are observed with a large variation, while the HRS obtained by low reset voltage provides gradual and uniform switching behaviors. The improvement of gradual switching and the programming accuracy are analyzed regarding cycle-to-cycle as well as device-to-device variations. We believe that these results can be applied to operate TiOx/Al2O3-based memristors in areas requiring highly accurate tuning characteristics.

UR - https://www.scopus.com/pages/publications/85093836643

U2 - 10.1063/5.0021626

DO - 10.1063/5.0021626

M3 - Article

AN - SCOPUS:85093836643

SN - 0003-6951

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152103-1

ER -

Reset-voltage-dependent precise tuning operation of TiO_x/Al₂O₃memristive crossbar array

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