Resistive switching behavior of Cr-doped SrZrO 3 perovskite thin films for random access memory applications

Min Kyu Yang; Dal Young Kim; Jae Wan Park; Jeon Kook Lee

Resistive switching behavior of Cr-doped SrZrO ₃ perovskite thin films for random access memory applications

Min Kyu Yang, Dal Young Kim, Jae Wan Park, Jeon Kook Lee

Dept. of Optometry

Korea Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Au/Cr-doped SrZrO ₃/SrRuO ₃ thin film structure was fabricated on SrTiO ₃ (100) substrates by using pulsed laser deposition (PLD). The Cr-doped SrZrO ₃ thin films and SrRuO ₃ bottom electrodes were epitaxially grown along the (hh0/001) direction. We have studied their resistive switching behavior and memory effects for ReRAM applications. Reproducible insulator-conductor switching behavior was observed with an on/off resistance ratio of about 20. We could also observe that the I-V characteristic of the structure was not linear but diode-like. This agrees well with previous studies on Pr _0.7Ca _0.3MnO ₃, and implies that the Au/SrZrO ₃: Cr interfaces play an important role in the resistive switching.

Original language	English
Pages (from-to)	S313-S316
Journal	Journal of the Korean Physical Society
Volume	47
Issue number	SUPPL. 2
State	Published - Sep 2005

Keywords

Memory effects
SrZrO
Switching behavior

Cite this

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title = "Resistive switching behavior of Cr-doped SrZrO 3 perovskite thin films for random access memory applications",

abstract = "Au/Cr-doped SrZrO 3/SrRuO 3 thin film structure was fabricated on SrTiO 3 (100) substrates by using pulsed laser deposition (PLD). The Cr-doped SrZrO 3 thin films and SrRuO 3 bottom electrodes were epitaxially grown along the (hh0/001) direction. We have studied their resistive switching behavior and memory effects for ReRAM applications. Reproducible insulator-conductor switching behavior was observed with an on/off resistance ratio of about 20. We could also observe that the I-V characteristic of the structure was not linear but diode-like. This agrees well with previous studies on Pr 0.7Ca 0.3MnO 3, and implies that the Au/SrZrO 3: Cr interfaces play an important role in the resistive switching.",

keywords = "Memory effects, SrZrO, Switching behavior",

author = "Yang, \{Min Kyu\} and Kim, \{Dal Young\} and Park, \{Jae Wan\} and Lee, \{Jeon Kook\}",

year = "2005",

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language = "English",

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pages = "S313--S316",

journal = "Journal of the Korean Physical Society",

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T1 - Resistive switching behavior of Cr-doped SrZrO 3 perovskite thin films for random access memory applications

AU - Yang, Min Kyu

AU - Kim, Dal Young

AU - Park, Jae Wan

AU - Lee, Jeon Kook

PY - 2005/9

Y1 - 2005/9

N2 - Au/Cr-doped SrZrO 3/SrRuO 3 thin film structure was fabricated on SrTiO 3 (100) substrates by using pulsed laser deposition (PLD). The Cr-doped SrZrO 3 thin films and SrRuO 3 bottom electrodes were epitaxially grown along the (hh0/001) direction. We have studied their resistive switching behavior and memory effects for ReRAM applications. Reproducible insulator-conductor switching behavior was observed with an on/off resistance ratio of about 20. We could also observe that the I-V characteristic of the structure was not linear but diode-like. This agrees well with previous studies on Pr 0.7Ca 0.3MnO 3, and implies that the Au/SrZrO 3: Cr interfaces play an important role in the resistive switching.

AB - Au/Cr-doped SrZrO 3/SrRuO 3 thin film structure was fabricated on SrTiO 3 (100) substrates by using pulsed laser deposition (PLD). The Cr-doped SrZrO 3 thin films and SrRuO 3 bottom electrodes were epitaxially grown along the (hh0/001) direction. We have studied their resistive switching behavior and memory effects for ReRAM applications. Reproducible insulator-conductor switching behavior was observed with an on/off resistance ratio of about 20. We could also observe that the I-V characteristic of the structure was not linear but diode-like. This agrees well with previous studies on Pr 0.7Ca 0.3MnO 3, and implies that the Au/SrZrO 3: Cr interfaces play an important role in the resistive switching.

KW - Memory effects

KW - SrZrO

KW - Switching behavior

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M3 - Article

AN - SCOPUS:27444445063

SN - 0374-4884

VL - 47

SP - S313-S316

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. 2

ER -

Resistive switching behavior of Cr-doped SrZrO ₃ perovskite thin films for random access memory applications

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Keywords

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