Resistive switching in Pt/Al2O3/TiO2/Ru stacked structures

Kyung Min Kim; Byung Joon Choi; Bon Wook Koo; Seol Choi; Doo Seok Jeong; Cheol Seong Hwang

doi:10.1149/1.2353899

Resistive switching in Pt/Al₂O₃/TiO₂/Ru stacked structures

Kyung Min Kim, Byung Joon Choi, Bon Wook Koo, Seol Choi, Doo Seok Jeong, Cheol Seong Hwang

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

116 Scopus citations

Abstract

The electric-pulse-induced resistive switching properties of TiO2, Al2 O3, Al2 O3 TiO2, and Al2 O3 TiO2 Al2 O3 thin films were studied by current-voltage (I-V) measurements using Pt/insulator/Ru structures and conductive atomic force microscopy. The switching parameters of the TiO2 film were stable, whereas those of the Al2 O3 films show random variations during repeated I - V measurements. Both films show resistive switching by a filamentary switching mechanism with linear conduction behavior in the low V region. The stacked film shows a bias polarity-dependent switching behavior. This suggests that the nucleation of the conducting filaments occurs at the interface where the electrons are injected.

Original language	English
Pages (from-to)	343-346
Number of pages	4
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	12
DOIs	https://doi.org/10.1149/1.2353899
State	Published - 1 Jan 2006

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title = "Resistive switching in Pt/Al2O3/TiO2/Ru stacked structures",

abstract = "The electric-pulse-induced resistive switching properties of TiO2, Al2 O3, Al2 O3 TiO2, and Al2 O3 TiO2 Al2 O3 thin films were studied by current-voltage (I-V) measurements using Pt/insulator/Ru structures and conductive atomic force microscopy. The switching parameters of the TiO2 film were stable, whereas those of the Al2 O3 films show random variations during repeated I - V measurements. Both films show resistive switching by a filamentary switching mechanism with linear conduction behavior in the low V region. The stacked film shows a bias polarity-dependent switching behavior. This suggests that the nucleation of the conducting filaments occurs at the interface where the electrons are injected.",

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AU - Kim, Kyung Min

AU - Choi, Byung Joon

AU - Koo, Bon Wook

AU - Choi, Seol

AU - Jeong, Doo Seok

AU - Hwang, Cheol Seong

PY - 2006/1/1

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N2 - The electric-pulse-induced resistive switching properties of TiO2, Al2 O3, Al2 O3 TiO2, and Al2 O3 TiO2 Al2 O3 thin films were studied by current-voltage (I-V) measurements using Pt/insulator/Ru structures and conductive atomic force microscopy. The switching parameters of the TiO2 film were stable, whereas those of the Al2 O3 films show random variations during repeated I - V measurements. Both films show resistive switching by a filamentary switching mechanism with linear conduction behavior in the low V region. The stacked film shows a bias polarity-dependent switching behavior. This suggests that the nucleation of the conducting filaments occurs at the interface where the electrons are injected.

AB - The electric-pulse-induced resistive switching properties of TiO2, Al2 O3, Al2 O3 TiO2, and Al2 O3 TiO2 Al2 O3 thin films were studied by current-voltage (I-V) measurements using Pt/insulator/Ru structures and conductive atomic force microscopy. The switching parameters of the TiO2 film were stable, whereas those of the Al2 O3 films show random variations during repeated I - V measurements. Both films show resistive switching by a filamentary switching mechanism with linear conduction behavior in the low V region. The stacked film shows a bias polarity-dependent switching behavior. This suggests that the nucleation of the conducting filaments occurs at the interface where the electrons are injected.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

ER -

Resistive switching in Pt/Al₂O₃/TiO₂/Ru stacked structures

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