Schottky diodes in CMOS for terahertz circuits and systems

Yarning Zhang; Ruonan Han; Youngwan Kim; Dae Yeon Kim; Hisashi Shichijo; Swaminathan Sankaran; Chuying Mao; Eunyoung Seok; Dongha Shim; K. O. Kenneth

doi:10.1109/SiRF.2013.6489420

Schottky diodes in CMOS for terahertz circuits and systems

Yarning Zhang, Ruonan Han, Youngwan Kim, Dae Yeon Kim, Hisashi Shichijo, Swaminathan Sankaran, Chuying Mao, Eunyoung Seok, Dongha Shim, K. O. Kenneth

Dept. of Manufacturing Systems and Design Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Using Polysilicon Gate Separated Schottky Diode structures that can be fabricated without any process modifications in a foundry digital 130-nm CMOS process, cut-off frequency of 2 THz has been measured. In addition, exploiting the complementary of CMOS technology, an anti-parallel diode pair with cut-off frequency of 660 GHz consisting of an n-type and a p-type Schottky diode has been demonstrated in the same 130-nm CMOS process. Using the diodes, a frequency doubler and a tripler have been demonstrated. Additionally, the diodes have been utilized to implement 280-GHz and 860-GHz detectors for imaging. A fully-integrated 280-GHz 4×4 imager array exhibits measured NEP of 29pW/Hz^1/2 and responsivity of 5.1kV/W (323V/W without the amplifier). The 860-GHz detector without an amplifier achieves responsivity of 355V/W and NEP of 32pW/Hz^1/2. The NEP at 860GHz is 2X better than the best reported performance of MOSFET-based imagers without a silicon lens attached to the chip.

Original language	English
Title of host publication	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013
Pages	24-26
Number of pages	3
DOIs	https://doi.org/10.1109/SiRF.2013.6489420
State	Published - 2013
Event	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013 - Austin, TX, United States Duration: 21 Jan 2013 → 23 Jan 2013

Publication series

Name	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013

Conference

Conference	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013
Country/Territory	United States
City	Austin, TX
Period	21/01/13 → 23/01/13

Keywords

CMOS
Millimeter wave
Schottky barrier diode
Sub-millimeter wave
Terahertz
frequency multiplication
imager

Access to Document

10.1109/SiRF.2013.6489420

Cite this

Zhang, Y., Han, R., Kim, Y., Kim, D. Y., Shichijo, H., Sankaran, S., Mao, C., Seok, E., Shim, D., & Kenneth, K. O. (2013). Schottky diodes in CMOS for terahertz circuits and systems. In 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013 (pp. 24-26). Article 6489420 (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013). https://doi.org/10.1109/SiRF.2013.6489420

@inproceedings{b5a5a1f793a5419ca7f2101da8b312f1,

title = "Schottky diodes in CMOS for terahertz circuits and systems",

abstract = "Using Polysilicon Gate Separated Schottky Diode structures that can be fabricated without any process modifications in a foundry digital 130-nm CMOS process, cut-off frequency of 2 THz has been measured. In addition, exploiting the complementary of CMOS technology, an anti-parallel diode pair with cut-off frequency of 660 GHz consisting of an n-type and a p-type Schottky diode has been demonstrated in the same 130-nm CMOS process. Using the diodes, a frequency doubler and a tripler have been demonstrated. Additionally, the diodes have been utilized to implement 280-GHz and 860-GHz detectors for imaging. A fully-integrated 280-GHz 4×4 imager array exhibits measured NEP of 29pW/Hz1/2 and responsivity of 5.1kV/W (323V/W without the amplifier). The 860-GHz detector without an amplifier achieves responsivity of 355V/W and NEP of 32pW/Hz1/2. The NEP at 860GHz is 2X better than the best reported performance of MOSFET-based imagers without a silicon lens attached to the chip.",

keywords = "CMOS, Millimeter wave, Schottky barrier diode, Sub-millimeter wave, Terahertz, frequency multiplication, imager",

author = "Yarning Zhang and Ruonan Han and Youngwan Kim and Kim, \{Dae Yeon\} and Hisashi Shichijo and Swaminathan Sankaran and Chuying Mao and Eunyoung Seok and Dongha Shim and Kenneth, \{K. O.\}",

year = "2013",

doi = "10.1109/SiRF.2013.6489420",

language = "English",

isbn = "9781467315517",

series = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013",

pages = "24--26",

booktitle = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013",

note = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013 ; Conference date: 21-01-2013 Through 23-01-2013",

}

Zhang, Y, Han, R, Kim, Y, Kim, DY, Shichijo, H, Sankaran, S, Mao, C, Seok, E, Shim, D & Kenneth, KO 2013, Schottky diodes in CMOS for terahertz circuits and systems. in 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013., 6489420, 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013, pp. 24-26, 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013, Austin, TX, United States, 21/01/13. https://doi.org/10.1109/SiRF.2013.6489420

Schottky diodes in CMOS for terahertz circuits and systems. / Zhang, Yarning; Han, Ruonan; Kim, Youngwan et al.
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013. 2013. p. 24-26 6489420 (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Schottky diodes in CMOS for terahertz circuits and systems

AU - Zhang, Yarning

AU - Han, Ruonan

AU - Kim, Youngwan

AU - Kim, Dae Yeon

AU - Shichijo, Hisashi

AU - Sankaran, Swaminathan

AU - Mao, Chuying

AU - Seok, Eunyoung

AU - Shim, Dongha

AU - Kenneth, K. O.

PY - 2013

Y1 - 2013

N2 - Using Polysilicon Gate Separated Schottky Diode structures that can be fabricated without any process modifications in a foundry digital 130-nm CMOS process, cut-off frequency of 2 THz has been measured. In addition, exploiting the complementary of CMOS technology, an anti-parallel diode pair with cut-off frequency of 660 GHz consisting of an n-type and a p-type Schottky diode has been demonstrated in the same 130-nm CMOS process. Using the diodes, a frequency doubler and a tripler have been demonstrated. Additionally, the diodes have been utilized to implement 280-GHz and 860-GHz detectors for imaging. A fully-integrated 280-GHz 4×4 imager array exhibits measured NEP of 29pW/Hz1/2 and responsivity of 5.1kV/W (323V/W without the amplifier). The 860-GHz detector without an amplifier achieves responsivity of 355V/W and NEP of 32pW/Hz1/2. The NEP at 860GHz is 2X better than the best reported performance of MOSFET-based imagers without a silicon lens attached to the chip.

AB - Using Polysilicon Gate Separated Schottky Diode structures that can be fabricated without any process modifications in a foundry digital 130-nm CMOS process, cut-off frequency of 2 THz has been measured. In addition, exploiting the complementary of CMOS technology, an anti-parallel diode pair with cut-off frequency of 660 GHz consisting of an n-type and a p-type Schottky diode has been demonstrated in the same 130-nm CMOS process. Using the diodes, a frequency doubler and a tripler have been demonstrated. Additionally, the diodes have been utilized to implement 280-GHz and 860-GHz detectors for imaging. A fully-integrated 280-GHz 4×4 imager array exhibits measured NEP of 29pW/Hz1/2 and responsivity of 5.1kV/W (323V/W without the amplifier). The 860-GHz detector without an amplifier achieves responsivity of 355V/W and NEP of 32pW/Hz1/2. The NEP at 860GHz is 2X better than the best reported performance of MOSFET-based imagers without a silicon lens attached to the chip.

KW - CMOS

KW - Millimeter wave

KW - Schottky barrier diode

KW - Sub-millimeter wave

KW - Terahertz

KW - frequency multiplication

KW - imager

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U2 - 10.1109/SiRF.2013.6489420

DO - 10.1109/SiRF.2013.6489420

M3 - Conference contribution

AN - SCOPUS:84875985747

SN - 9781467315517

T3 - 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013

SP - 24

EP - 26

BT - 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013

T2 - 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013

Y2 - 21 January 2013 through 23 January 2013

ER -

Zhang Y, Han R, Kim Y, Kim DY, Shichijo H, Sankaran S et al. Schottky diodes in CMOS for terahertz circuits and systems. In 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013. 2013. p. 24-26. 6489420. (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013). doi: 10.1109/SiRF.2013.6489420

Schottky diodes in CMOS for terahertz circuits and systems

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