@inproceedings{b5a5a1f793a5419ca7f2101da8b312f1,
title = "Schottky diodes in CMOS for terahertz circuits and systems",
abstract = "Using Polysilicon Gate Separated Schottky Diode structures that can be fabricated without any process modifications in a foundry digital 130-nm CMOS process, cut-off frequency of 2 THz has been measured. In addition, exploiting the complementary of CMOS technology, an anti-parallel diode pair with cut-off frequency of 660 GHz consisting of an n-type and a p-type Schottky diode has been demonstrated in the same 130-nm CMOS process. Using the diodes, a frequency doubler and a tripler have been demonstrated. Additionally, the diodes have been utilized to implement 280-GHz and 860-GHz detectors for imaging. A fully-integrated 280-GHz 4×4 imager array exhibits measured NEP of 29pW/Hz1/2 and responsivity of 5.1kV/W (323V/W without the amplifier). The 860-GHz detector without an amplifier achieves responsivity of 355V/W and NEP of 32pW/Hz1/2. The NEP at 860GHz is 2X better than the best reported performance of MOSFET-based imagers without a silicon lens attached to the chip.",
keywords = "CMOS, Millimeter wave, Schottky barrier diode, Sub-millimeter wave, Terahertz, frequency multiplication, imager",
author = "Yarning Zhang and Ruonan Han and Youngwan Kim and Kim, \{Dae Yeon\} and Hisashi Shichijo and Swaminathan Sankaran and Chuying Mao and Eunyoung Seok and Dongha Shim and Kenneth, \{K. O.\}",
year = "2013",
doi = "10.1109/SiRF.2013.6489420",
language = "English",
isbn = "9781467315517",
series = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013",
pages = "24--26",
booktitle = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013",
note = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013 ; Conference date: 21-01-2013 Through 23-01-2013",
}