Single Si submicron wire photodetector fabricated by simple wet etching process

In this paper, we report on an oxidized single Si submicron wire photodetector with a metal-semiconductor-metal (MSM) structure. The single Si submicron wire was successfully fabricated using a simple and cost-effective wet etching process. The single Si submicron wire photodetector with SiO₂ layer achieved responsivity of 1.84 A/W and external quantum efficiency (EQE) of 6.23×10²% with illumination of 365 nm. Furthermore, rapid and stable ON/OFF switching was achieved and reproducible by the oxidation of the Si surface.