SiO₂incorporation effects in Ge₂Sb₂Te₅films prepared by magnetron sputtering for phase change random access memory devices

The phase change characteristics of Ge2 Sb2 Te5 (GST) films for phase change random access memory devices were improved by incorporating Si O2 into the GST film using cosputtering at room temperature. Isochronal annealing showed an increased resistivity of the crystallized GST films in proportion to the incorporated quantity of Si O2 which leads to a decrease in the writing current. Si O2 also inhibits crystallization of the amorphous GST film which can improve the long term stability of the metastable amorphous phase.