Abstract
Conductive SnxOy thin films were fabricated via RF reactive sputtering using SnO:Sn (80:20 mol%) composite target. The composite target was used to produce a chemically stable composition of SnxOy thin film while controlling structural defects by chemical reaction between tin and oxygen. During sputtering pressure, RF power, and substrate temperature were fixed, and oxygen partial pressure was varied from 0% to 12%. Annealing process was carried out at 300oC for 1 hour in vacuum. Except PO2 = 0% sample, all samples showed the transmittance of 80~90% and amorphous phase before and after annealing. Electrically stable p-type SnxOy thin film with high transmittance was only obtained from the oxygen partial pressure at 12%. The carrier concentration and mobility for the PO2= 12% were 6.36 × 1018 cm-3 and 1.02 cm2V-1s-1 respectively after annealing.
| Translated title of the contribution | Study of the effect of vacuum annealing on sputtered SnxOy thin films by SnO/Sn composite target |
|---|---|
| Original language | Korean |
| Pages (from-to) | 43-48 |
| Number of pages | 6 |
| Journal | J. Microelectron. Packag. Soc |
| Volume | 24 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jun 2017 |