@inproceedings{93703be0f19d4f2282ca622aafd29fda,
title = "SrTiO3 thin film growth by atomic layer deposition using Ti(O-iPr)2(thd)2, Sr(thd)2, and H2O",
abstract = "SrTiO3 (STO) thin films were deposited by atomic-layer- deposition (ALD) at a higher temperature (370°C) using Ti(O-iPr) 2(thd)2 and Sr(thd)2 as Ti-, and Sr-precursors, respectively, and H2O as the oxidant, in order to improve the crystallinity and film density. With these precursors, the ALD process window of the STO film could be extended up to 400°C. With the help of a seed-layer, more dense and well-crystallized STO films could be obtained even in the as-deposited state. The adoption of a seed-layer and the seed-layer annealing temperature are the crucial factors for obtaining high capacitance. In the case of a planar capacitor structure consisting of Pt/STO (27nm)/Ru(bottom), an equivalent oxide thickness of 0.73nm and leakage current density of 1×10-7 A/cm2 at 1V were achieved.",
author = "Lee, \{Sang Woon\} and Kwon, \{Oh Seong\} and Han, \{Jeong Hwan\} and Hwang, \{Cheol Seong\}",
year = "2007",
doi = "10.1149/1.2728791",
language = "English",
isbn = "9781566775526",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "87--97",
booktitle = "ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics",
edition = "3",
note = "Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting ; Conference date: 06-05-2007 Through 11-05-2007",
}