Stacked chip-to-chip interconnections using wafer bonding technology with dielectric bonding glues

J. Q. Lü, Y. Kwon, R. P. Kraft, R. J. Gutmann, J. F. McDonald, T. S. Gale

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

45 Scopus citations

Abstract

Three-dimensional (3D) interconnects offer the potential of reducing fabrication and performance limitations of future generations of planar ICs. This paper describes a specific approach, incorporating wafer alignment and wafer bonding of two 200-mm silicon wafers, along with subsequent processing steps. Our approach using dielectrics as the bonding glue layer provides a monolithic 3D interconnect process, which is fully compatible with back-end-of-the-line processing. This 3D technology enables heterogeneous systems, such as future electronic and photonic systems using a mix-and-match hard IP core design approach, and provides a high-density pin-out alternative to stacked chip-scale packages today.

Original languageEnglish
Title of host publicationProceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages219-221
Number of pages3
ISBN (Electronic)0780366786, 9780780366787
DOIs
StatePublished - 2001
EventIEEE International Interconnect Technology Conference, IITC 2001 - Burlingame, United States
Duration: 4 Jun 20016 Jun 2001

Publication series

NameProceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001

Conference

ConferenceIEEE International Interconnect Technology Conference, IITC 2001
Country/TerritoryUnited States
CityBurlingame
Period4/06/016/06/01

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