Study of charges in fluorinated polyimide film by using capacitance-voltage method

Yong K. Lee

doi:10.1142/S0217984906010822

Study of charges in fluorinated polyimide film by using capacitance-voltage method

Yong K. Lee

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The deviations of ideality, such as shifts or distortions, in the Capacitance-Voltage (C-V) curve were examined to characterize charges in fluorinated polyimide film in MPOS (Cu-fluorinated polyimide film-SiO ₂-Si) test structure. It was observed that charges in fluorinated polyimide film hard baked at 325°C and annealed at 425°C were mobile and positive charged. The mobile charge concentration was 10¹¹/cm ² and the activation energy of the drift of positive mobile charge was 0.6 V.

Original language	English
Pages (from-to)	379-383
Number of pages	5
Journal	Modern Physics Letters B
Volume	20
Issue number	7
DOIs	https://doi.org/10.1142/S0217984906010822
State	Published - 20 Mar 2006

Keywords

Accumulation region
Capacitance-Voltage
Depletion region
Flat band voltage
Fluorinated polyimide
Interlayer dielectric
ULSI

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10.1142/S0217984906010822

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title = "Study of charges in fluorinated polyimide film by using capacitance-voltage method",

abstract = "The deviations of ideality, such as shifts or distortions, in the Capacitance-Voltage (C-V) curve were examined to characterize charges in fluorinated polyimide film in MPOS (Cu-fluorinated polyimide film-SiO 2-Si) test structure. It was observed that charges in fluorinated polyimide film hard baked at 325°C and annealed at 425°C were mobile and positive charged. The mobile charge concentration was 1011/cm 2 and the activation energy of the drift of positive mobile charge was 0.6 V.",

keywords = "Accumulation region, Capacitance-Voltage, Depletion region, Flat band voltage, Fluorinated polyimide, Interlayer dielectric, ULSI",

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N2 - The deviations of ideality, such as shifts or distortions, in the Capacitance-Voltage (C-V) curve were examined to characterize charges in fluorinated polyimide film in MPOS (Cu-fluorinated polyimide film-SiO 2-Si) test structure. It was observed that charges in fluorinated polyimide film hard baked at 325°C and annealed at 425°C were mobile and positive charged. The mobile charge concentration was 1011/cm 2 and the activation energy of the drift of positive mobile charge was 0.6 V.

AB - The deviations of ideality, such as shifts or distortions, in the Capacitance-Voltage (C-V) curve were examined to characterize charges in fluorinated polyimide film in MPOS (Cu-fluorinated polyimide film-SiO 2-Si) test structure. It was observed that charges in fluorinated polyimide film hard baked at 325°C and annealed at 425°C were mobile and positive charged. The mobile charge concentration was 1011/cm 2 and the activation energy of the drift of positive mobile charge was 0.6 V.

KW - Accumulation region

KW - Capacitance-Voltage

KW - Depletion region

KW - Flat band voltage

KW - Fluorinated polyimide

KW - Interlayer dielectric

KW - ULSI

UR - https://www.scopus.com/pages/publications/33645035661

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DO - 10.1142/S0217984906010822

M3 - Article

AN - SCOPUS:33645035661

SN - 0217-9849

VL - 20

SP - 379

EP - 383

JO - Modern Physics Letters B

JF - Modern Physics Letters B

IS - 7

ER -

Study of charges in fluorinated polyimide film by using capacitance-voltage method

Abstract

Keywords

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