Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure

Y. K. Lee; Khin Maung Latt; Thomas Osipowicz; Cham Sher-Yi

doi:10.1016/S1369-8001(00)00031-7

Study of diffusion barrier properties of ternary alloy (Ti_xAl_yN_z) in Cu/Ti_xAl_yN_z/SiO₂/Si thin film structure

Y. K. Lee, Khin Maung Latt, Thomas Osipowicz, Cham Sher-Yi

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The effects of aluminum (Al) incorporation on the performance of a titanium nitride (TiN) diffusion barrier were investigated up to the temperature of 1000 °C in the Cu/Ti_xAl_yN_z/SiO₂/Si structure. The thermal stability of the structure was evaluated by using four-point probe, X-ray diffraction, and Rutherford Backscattering Spectroscopy. The Cu/Ti_xAl_yN_z/SiO₂/Si system retained its structure up to 1000 °C. The incorporation of Al into the Ti_xN_y film modified the microstructure of the Ti_xN_y film, especially the microstructure of grain boundaries in which oxide and nitride compounds of Al and Ti were formed during thermal annealing. As a result, the fast pathways for copper (Cu) diffusion were effectively blocked by these compounds and the stability of the barrier performance was enhanced up to 1000 °C.

Original language	English
Pages (from-to)	191-194
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	3
Issue number	3
DOIs	https://doi.org/10.1016/S1369-8001(00)00031-7
State	Published - Jun 2000

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title = "Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure",

abstract = "The effects of aluminum (Al) incorporation on the performance of a titanium nitride (TiN) diffusion barrier were investigated up to the temperature of 1000 °C in the Cu/TixAlyNz/SiO2/Si structure. The thermal stability of the structure was evaluated by using four-point probe, X-ray diffraction, and Rutherford Backscattering Spectroscopy. The Cu/TixAlyNz/SiO2/Si system retained its structure up to 1000 °C. The incorporation of Al into the TixNy film modified the microstructure of the TixNy film, especially the microstructure of grain boundaries in which oxide and nitride compounds of Al and Ti were formed during thermal annealing. As a result, the fast pathways for copper (Cu) diffusion were effectively blocked by these compounds and the stability of the barrier performance was enhanced up to 1000 °C.",

author = "Lee, {Y. K.} and Latt, {Khin Maung} and Thomas Osipowicz and Cham Sher-Yi",

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T1 - Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure

AU - Lee, Y. K.

AU - Latt, Khin Maung

AU - Osipowicz, Thomas

AU - Sher-Yi, Cham

PY - 2000/6

Y1 - 2000/6

N2 - The effects of aluminum (Al) incorporation on the performance of a titanium nitride (TiN) diffusion barrier were investigated up to the temperature of 1000 °C in the Cu/TixAlyNz/SiO2/Si structure. The thermal stability of the structure was evaluated by using four-point probe, X-ray diffraction, and Rutherford Backscattering Spectroscopy. The Cu/TixAlyNz/SiO2/Si system retained its structure up to 1000 °C. The incorporation of Al into the TixNy film modified the microstructure of the TixNy film, especially the microstructure of grain boundaries in which oxide and nitride compounds of Al and Ti were formed during thermal annealing. As a result, the fast pathways for copper (Cu) diffusion were effectively blocked by these compounds and the stability of the barrier performance was enhanced up to 1000 °C.

AB - The effects of aluminum (Al) incorporation on the performance of a titanium nitride (TiN) diffusion barrier were investigated up to the temperature of 1000 °C in the Cu/TixAlyNz/SiO2/Si structure. The thermal stability of the structure was evaluated by using four-point probe, X-ray diffraction, and Rutherford Backscattering Spectroscopy. The Cu/TixAlyNz/SiO2/Si system retained its structure up to 1000 °C. The incorporation of Al into the TixNy film modified the microstructure of the TixNy film, especially the microstructure of grain boundaries in which oxide and nitride compounds of Al and Ti were formed during thermal annealing. As a result, the fast pathways for copper (Cu) diffusion were effectively blocked by these compounds and the stability of the barrier performance was enhanced up to 1000 °C.

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U2 - 10.1016/S1369-8001(00)00031-7

DO - 10.1016/S1369-8001(00)00031-7

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SN - 1369-8001

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JO - Materials Science in Semiconductor Processing

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ER -

Study of diffusion barrier properties of ternary alloy (Ti_xAl_yN_z) in Cu/Ti_xAl_yN_z/SiO₂/Si thin film structure

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