Study of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure

K. M. Latt; K. Lee; Y. K. Lee

doi:10.1023/A:1010940803210

Study of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO₂/Si multilayer structure

K. M. Latt, K. Lee, Y. K. Lee

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A TaN diffusion barrier and a seed Cu layer were deposited by ionized metal plasma (IMP) sputtering as a deposition technique. The evolution of the crystallographic texture grain growth and intermixing/reactions of the blanket EP-Cu film before and after annealing up to 950°C in the EPCu/IMPCu/ImPTaN/Simultilayer structure was characterized. The resulting data was analyzed in detail.

Original language	English
Pages (from-to)	559-562
Number of pages	4
Journal	Journal of Materials Science Letters
Volume	20
Issue number	6
DOIs	https://doi.org/10.1023/A:1010940803210
State	Published - 15 Mar 2001

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title = "Study of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure",

abstract = "A TaN diffusion barrier and a seed Cu layer were deposited by ionized metal plasma (IMP) sputtering as a deposition technique. The evolution of the crystallographic texture grain growth and intermixing/reactions of the blanket EP-Cu film before and after annealing up to 950°C in the EPCu/IMPCu/ImPTaN/Simultilayer structure was characterized. The resulting data was analyzed in detail.",

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AU - Lee, K.

AU - Lee, Y. K.

PY - 2001/3/15

Y1 - 2001/3/15

N2 - A TaN diffusion barrier and a seed Cu layer were deposited by ionized metal plasma (IMP) sputtering as a deposition technique. The evolution of the crystallographic texture grain growth and intermixing/reactions of the blanket EP-Cu film before and after annealing up to 950°C in the EPCu/IMPCu/ImPTaN/Simultilayer structure was characterized. The resulting data was analyzed in detail.

AB - A TaN diffusion barrier and a seed Cu layer were deposited by ionized metal plasma (IMP) sputtering as a deposition technique. The evolution of the crystallographic texture grain growth and intermixing/reactions of the blanket EP-Cu film before and after annealing up to 950°C in the EPCu/IMPCu/ImPTaN/Simultilayer structure was characterized. The resulting data was analyzed in detail.

UR - https://www.scopus.com/pages/publications/0035867024

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DO - 10.1023/A:1010940803210

M3 - Article

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VL - 20

SP - 559

EP - 562

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 6

ER -

Study of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO₂/Si multilayer structure

Abstract

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