Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules

Ui Min Choi; Frede Blaabjerg; Søren Jørgensen

doi:10.1109/TPEL.2016.2618917

Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules

Ui Min Choi, Frede Blaabjerg, Søren Jørgensen

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105 Scopus citations

Abstract

In this paper, the effect of junction temperature swing duration on lifetime of transfer molded power insulated gate bipolar transistor (IGBT) modules is studied and a relevant lifetime factor is modeled. This study is based on 39 accelerated power cycling test results under six different conditions by an advanced power cycling test setup, which allows tested modules to be operated under more realistic electrical conditions during the power cycling test. The analysis of the test results and the temperature swing duration dependent lifetime factor under different definitions and confidence levels are presented. This study enables to include the t_ΔTj effect on lifetime model of IGBT modules for its lifetime estimation and it may result in improved lifetime prediction of IGBT modules under given mission profiles of converters. A postfailure analysis of the tested IGBT modules is also performed.

Original language	English
Article number	7820215
Pages (from-to)	6434-6443
Number of pages	10
Journal	IEEE Transactions on Power Electronics
Volume	32
Issue number	8
DOIs	https://doi.org/10.1109/TPEL.2016.2618917
State	Published - Aug 2017

Keywords

Failure mechanism
IGBT module
insulated gate bipolar transistor (IGBT)
junction temperature swing duration
lifetime model
power cycling test
reliability

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10.1109/TPEL.2016.2618917

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title = "Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules",

abstract = "In this paper, the effect of junction temperature swing duration on lifetime of transfer molded power insulated gate bipolar transistor (IGBT) modules is studied and a relevant lifetime factor is modeled. This study is based on 39 accelerated power cycling test results under six different conditions by an advanced power cycling test setup, which allows tested modules to be operated under more realistic electrical conditions during the power cycling test. The analysis of the test results and the temperature swing duration dependent lifetime factor under different definitions and confidence levels are presented. This study enables to include the tΔTj effect on lifetime model of IGBT modules for its lifetime estimation and it may result in improved lifetime prediction of IGBT modules under given mission profiles of converters. A postfailure analysis of the tested IGBT modules is also performed.",

keywords = "Failure mechanism, IGBT module, insulated gate bipolar transistor (IGBT), junction temperature swing duration, lifetime model, power cycling test, reliability",

author = "Choi, {Ui Min} and Frede Blaabjerg and S{\o}ren J{\o}rgensen",

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AU - Choi, Ui Min

AU - Blaabjerg, Frede

AU - Jørgensen, Søren

PY - 2017/8

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AB - In this paper, the effect of junction temperature swing duration on lifetime of transfer molded power insulated gate bipolar transistor (IGBT) modules is studied and a relevant lifetime factor is modeled. This study is based on 39 accelerated power cycling test results under six different conditions by an advanced power cycling test setup, which allows tested modules to be operated under more realistic electrical conditions during the power cycling test. The analysis of the test results and the temperature swing duration dependent lifetime factor under different definitions and confidence levels are presented. This study enables to include the tΔTj effect on lifetime model of IGBT modules for its lifetime estimation and it may result in improved lifetime prediction of IGBT modules under given mission profiles of converters. A postfailure analysis of the tested IGBT modules is also performed.

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Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules

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