TY - JOUR
T1 - Study on electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure
AU - Latt, Khin Maung
AU - Lee, Y. K.
AU - Van Kan, J. A.
AU - Mahabai, A. A.
PY - 2001
Y1 - 2001
N2 - Electroplated Cu film on a thin seed layer of IMP deposited Cu has been investigated in the EPCu (1 μm)/IMPCu (150 nm)/TaN (25 nm)/SiO2 (500 nm)/Si multi-layer structure. The characteristics of Electroplated-Cu films before and after annealing were investigated by means of sheet resistance, X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Rutherford Backscattering Spectroscopy (RBS). Annealing at temperatures of higher than 750°C resulted in slightly higher sheet resistance, larger grain sizes and rougher surface. SEM micrograph showed that the agglomeration of EP-Cu film occurred only at annealing temperatures higher than 850°C. During annealing, the EP-Cu grain grew normally and their sizes increased to about five times larger than the thickness of the EP-Cu film but the (111) preferred orientation was maintained up to 950°C. Furthermore, the interfacial reactions between Cu layer and IMP-TaN diffusion barrier were also detected at annealing temperatures of higher than 750°C.
AB - Electroplated Cu film on a thin seed layer of IMP deposited Cu has been investigated in the EPCu (1 μm)/IMPCu (150 nm)/TaN (25 nm)/SiO2 (500 nm)/Si multi-layer structure. The characteristics of Electroplated-Cu films before and after annealing were investigated by means of sheet resistance, X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Rutherford Backscattering Spectroscopy (RBS). Annealing at temperatures of higher than 750°C resulted in slightly higher sheet resistance, larger grain sizes and rougher surface. SEM micrograph showed that the agglomeration of EP-Cu film occurred only at annealing temperatures higher than 850°C. During annealing, the EP-Cu grain grew normally and their sizes increased to about five times larger than the thickness of the EP-Cu film but the (111) preferred orientation was maintained up to 950°C. Furthermore, the interfacial reactions between Cu layer and IMP-TaN diffusion barrier were also detected at annealing temperatures of higher than 750°C.
UR - https://www.scopus.com/pages/publications/0035891370
U2 - 10.1023/A:1012441900620
DO - 10.1023/A:1012441900620
M3 - Article
AN - SCOPUS:0035891370
SN - 0022-2461
VL - 36
SP - 5475
EP - 5480
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 22
M1 - 390572
ER -