Study on the resistive switching time of TiO2 thin films

Byunq Joon Choi; Seol Choi; Kyunq Min Kim; Yong Cheol Shin; Cheol Seong Hwang; Sung Yeon Hwang; Sung Sil Cho; Sanghyun Park; Suk Kyoung Hong

doi:10.1063/1.2219726

Study on the resistive switching time of TiO₂ thin films

Byunq Joon Choi, Seol Choi, Kyunq Min Kim, Yong Cheol Shin, Cheol Seong Hwang, Sung Yeon Hwang, Sung Sil Cho, Sanghyun Park, Suk Kyoung Hong

Dept. of Materials Science & Engineering

SK Corporation

Research output: Contribution to journal › Article › peer-review

119 Scopus citations

Abstract

The required time for voltage-pulse-induced resistive switching of 40-nm-thick TiO₂ thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area ∼0.07 μm²) was studied as a function of pulse voltage. For off → on switching at least 2 V was necessary and the minimum switching times were ∼20 ns at 2 V and ∼10 ns at 3 V. For on → off switching, a minimum switching time of 5 μs was obtained at 2.5 V. The resistance of the on-state device was also dependent on the switching voltage and time.

Original language	English
Article number	012906
Journal	Applied Physics Letters
Volume	89
Issue number	1
DOIs	https://doi.org/10.1063/1.2219726
State	Published - 2006

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10.1063/1.2219726

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title = "Study on the resistive switching time of TiO2 thin films",

abstract = "The required time for voltage-pulse-induced resistive switching of 40-nm-thick TiO2 thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area ∼0.07 μm2) was studied as a function of pulse voltage. For off → on switching at least 2 V was necessary and the minimum switching times were ∼20 ns at 2 V and ∼10 ns at 3 V. For on → off switching, a minimum switching time of 5 μs was obtained at 2.5 V. The resistance of the on-state device was also dependent on the switching voltage and time.",

author = "Choi, \{Byunq Joon\} and Seol Choi and Kim, \{Kyunq Min\} and Shin, \{Yong Cheol\} and Hwang, \{Cheol Seong\} and Hwang, \{Sung Yeon\} and Cho, \{Sung Sil\} and Sanghyun Park and Hong, \{Suk Kyoung\}",

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T1 - Study on the resistive switching time of TiO2 thin films

AU - Choi, Byunq Joon

AU - Choi, Seol

AU - Kim, Kyunq Min

AU - Shin, Yong Cheol

AU - Hwang, Cheol Seong

AU - Hwang, Sung Yeon

AU - Cho, Sung Sil

AU - Park, Sanghyun

AU - Hong, Suk Kyoung

PY - 2006

Y1 - 2006

N2 - The required time for voltage-pulse-induced resistive switching of 40-nm-thick TiO2 thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area ∼0.07 μm2) was studied as a function of pulse voltage. For off → on switching at least 2 V was necessary and the minimum switching times were ∼20 ns at 2 V and ∼10 ns at 3 V. For on → off switching, a minimum switching time of 5 μs was obtained at 2.5 V. The resistance of the on-state device was also dependent on the switching voltage and time.

AB - The required time for voltage-pulse-induced resistive switching of 40-nm-thick TiO2 thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area ∼0.07 μm2) was studied as a function of pulse voltage. For off → on switching at least 2 V was necessary and the minimum switching times were ∼20 ns at 2 V and ∼10 ns at 3 V. For on → off switching, a minimum switching time of 5 μs was obtained at 2.5 V. The resistance of the on-state device was also dependent on the switching voltage and time.

UR - https://www.scopus.com/pages/publications/33745767057

U2 - 10.1063/1.2219726

DO - 10.1063/1.2219726

M3 - Article

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SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012906

ER -

Study on the resistive switching time of TiO₂ thin films

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