Study on the resistive switching time of TiO2 thin films

Byunq Joon Choi; Seol Choi; Kyunq Min Kim; Yong Cheol Shin; Cheol Seong Hwang; Sung Yeon Hwang; Sung Sil Cho; Sanghyun Park; Suk Kyoung Hong

doi:10.1063/1.2219726

Study on the resistive switching time of TiO₂ thin films

Byunq Joon Choi
, Seol Choi
, Kyunq Min Kim
, Yong Cheol Shin
, Cheol Seong Hwang
, Sung Yeon Hwang
, Sung Sil Cho
, Sanghyun Park
, Suk Kyoung Hong

Dept. of Materials Science & Engineering

SK Corporation

Research output: Contribution to journal › Article › peer-review

119 Scopus citations

Abstract

The required time for voltage-pulse-induced resistive switching of 40-nm-thick TiO₂ thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area ∼0.07 μm²) was studied as a function of pulse voltage. For off → on switching at least 2 V was necessary and the minimum switching times were ∼20 ns at 2 V and ∼10 ns at 3 V. For on → off switching, a minimum switching time of 5 μs was obtained at 2.5 V. The resistance of the on-state device was also dependent on the switching voltage and time.

Original language	English
Article number	012906
Journal	Applied Physics Letters
Volume	89
Issue number	1
DOIs	https://doi.org/10.1063/1.2219726
State	Published - 2006

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10.1063/1.2219726

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title = "Study on the resistive switching time of TiO2 thin films",

abstract = "The required time for voltage-pulse-induced resistive switching of 40-nm-thick TiO2 thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area ∼0.07 μm2) was studied as a function of pulse voltage. For off → on switching at least 2 V was necessary and the minimum switching times were ∼20 ns at 2 V and ∼10 ns at 3 V. For on → off switching, a minimum switching time of 5 μs was obtained at 2.5 V. The resistance of the on-state device was also dependent on the switching voltage and time.",

author = "Choi, \{Byunq Joon\} and Seol Choi and Kim, \{Kyunq Min\} and Shin, \{Yong Cheol\} and Hwang, \{Cheol Seong\} and Hwang, \{Sung Yeon\} and Cho, \{Sung Sil\} and Sanghyun Park and Hong, \{Suk Kyoung\}",

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T1 - Study on the resistive switching time of TiO2 thin films

AU - Choi, Byunq Joon

AU - Choi, Seol

AU - Kim, Kyunq Min

AU - Shin, Yong Cheol

AU - Hwang, Cheol Seong

AU - Hwang, Sung Yeon

AU - Cho, Sung Sil

AU - Park, Sanghyun

AU - Hong, Suk Kyoung

PY - 2006

Y1 - 2006

N2 - The required time for voltage-pulse-induced resistive switching of 40-nm-thick TiO2 thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area ∼0.07 μm2) was studied as a function of pulse voltage. For off → on switching at least 2 V was necessary and the minimum switching times were ∼20 ns at 2 V and ∼10 ns at 3 V. For on → off switching, a minimum switching time of 5 μs was obtained at 2.5 V. The resistance of the on-state device was also dependent on the switching voltage and time.

AB - The required time for voltage-pulse-induced resistive switching of 40-nm-thick TiO2 thin films integrated in a contact-type structure (Pt top and TiN bottom contact, contact area ∼0.07 μm2) was studied as a function of pulse voltage. For off → on switching at least 2 V was necessary and the minimum switching times were ∼20 ns at 2 V and ∼10 ns at 3 V. For on → off switching, a minimum switching time of 5 μs was obtained at 2.5 V. The resistance of the on-state device was also dependent on the switching voltage and time.

UR - https://www.scopus.com/pages/publications/33745767057

U2 - 10.1063/1.2219726

DO - 10.1063/1.2219726

M3 - Article

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SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012906

ER -

Study on the resistive switching time of TiO₂ thin films

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