Sub-threshold 영역의 MOSFET 동작을 이용한 OP-AMP 설계

In this paper, we suggest the design of operational amplifier(OP-AMP) using metal oxide semiconductor field effect transistor (MOSFET) in the operation of sub-threshold condition as a basic unit of an internet of things (IoT). The sub-threshold operation of MOSFET is useful for an ultra low power consumption of sensor network system in the IoT, because it cause the supply voltage to be reduced. From the simulation result using 0.35 um CMOS process, the supply voltage, VDD can be reduced with 0.6 V, open-loop gain of 43 dB and the power consumption was evaluated with about 1.3 μW and the active size for an integration was measured with 64 μm × 105 μm. It is expected that the proposed circuit is applied to the low power sensor network for IoT.