Abstract
In this paper, when applying current-mode circuit design technique showing constant power dissipation none the less operation frequency, to the low power design of dynamic voltage frequency scaling, we introduce the low power current-mode circuit design technique applying MOSFET in sub-threshold region, in order to solve the problem that has large power dissipation especially on the condition of low operating frequency. BSIM 3, was used as a MOSFET model in circuit simulation. From the simulation result, the power dissipation of the current memory circuit with sub-threshold MOSFET showed 19.98㎼, which means the consumption reduction effect of 98%, compared with 900㎼ in that with strong inversion. It is confirmed that the proposed circuit design technique will be available in DVFS using a current-mode circuit design.
| Translated title of the contribution | Current-Mode Circuit Design using Sub-threshold MOSFET |
|---|---|
| Original language | Korean |
| Pages (from-to) | 10-14 |
| Number of pages | 5 |
| Journal | 통신위성우주산업연구회논문지 |
| Volume | 8 |
| Issue number | 3 |
| State | Published - Sep 2013 |