Surface treatment of indium tin oxide by SF6 plasma for organic light-emitting diodes

Beomrak Choi; Hyunsik Yoon; Hong H. Lee

doi:10.1063/1.125771

Surface treatment of indium tin oxide by SF₆ plasma for organic light-emitting diodes

Beomrak Choi, Hyunsik Yoon, Hong H. Lee

Dept. of Chemical and Biomolecular Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

SF₆ plasma treatment of indium tin oxide highly improves the power efficiency and the stability of the organic light-emitting diode based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]. The treatment leads to a slight reduction in the surface roughness and a decrease in the surface content of Sn. The major effect, however, has to do with the surface incorporation of fluorine. This fluorinated surface improves the hole injection and thus the device performance.

Original language	English
Pages (from-to)	412-414
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	4
DOIs	https://doi.org/10.1063/1.125771
State	Published - 24 Jan 2000

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@article{3541ad44d788467a947237c0f1ba87df,

title = "Surface treatment of indium tin oxide by SF6 plasma for organic light-emitting diodes",

abstract = "SF6 plasma treatment of indium tin oxide highly improves the power efficiency and the stability of the organic light-emitting diode based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]. The treatment leads to a slight reduction in the surface roughness and a decrease in the surface content of Sn. The major effect, however, has to do with the surface incorporation of fluorine. This fluorinated surface improves the hole injection and thus the device performance.",

author = "Beomrak Choi and Hyunsik Yoon and Lee, \{Hong H.\}",

year = "2000",

month = jan,

day = "24",

doi = "10.1063/1.125771",

language = "English",

volume = "76",

pages = "412--414",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "4",

}

TY - JOUR

T1 - Surface treatment of indium tin oxide by SF6 plasma for organic light-emitting diodes

AU - Choi, Beomrak

AU - Yoon, Hyunsik

AU - Lee, Hong H.

PY - 2000/1/24

Y1 - 2000/1/24

N2 - SF6 plasma treatment of indium tin oxide highly improves the power efficiency and the stability of the organic light-emitting diode based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]. The treatment leads to a slight reduction in the surface roughness and a decrease in the surface content of Sn. The major effect, however, has to do with the surface incorporation of fluorine. This fluorinated surface improves the hole injection and thus the device performance.

AB - SF6 plasma treatment of indium tin oxide highly improves the power efficiency and the stability of the organic light-emitting diode based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]. The treatment leads to a slight reduction in the surface roughness and a decrease in the surface content of Sn. The major effect, however, has to do with the surface incorporation of fluorine. This fluorinated surface improves the hole injection and thus the device performance.

UR - http://www.scopus.com/inward/record.url?scp=0001336159&partnerID=8YFLogxK

U2 - 10.1063/1.125771

DO - 10.1063/1.125771

M3 - Article

AN - SCOPUS:0001336159

SN - 0003-6951

VL - 76

SP - 412

EP - 414

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Surface treatment of indium tin oxide by SF₆ plasma for organic light-emitting diodes

Abstract

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