Abstract
A symmetric varactor (SVAR) in 130-nm digital complementary metaloxidesemiconductor (CMOS) for frequency multiplier applications with the maximum cutoff frequency of ∼ 320 GHz and a dynamic cutoff frequency of ∼ 125 GHz is demonstrated. To demonstrate the generation of odd-order harmonics and suppression of even-order ones, an SVAR was measured at the pumping frequency of 900 MHz. The measured third-order harmonic power is more than 25 dB higher than that for the second order. Harmonic balance simulations showed that the SVAR pumped by a 50-GHz signal source can generate a 150-GHz third-harmonic output signal with 15.8-dB minimum conversion loss at the input power of 7.8 dBm. The SVAR can be integrated with other (CMOS) components to generate millimeter-wave signals.
Original language | English |
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Article number | 5725160 |
Pages (from-to) | 470-472 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2011 |
Keywords
- Accumulation mode
- complementary metal-oxide-semiconductor (CMOS)
- frequency multiplier
- millimeter wave
- symmetric varactor (SVAR)