Abstract
Electrospinning and galvanic displacement reaction are combined to fabricate ultra-long hollow chalcogen and chalcogenide nanofibers in a cost-effective and high throughput manner. This procedure exploits electrospinning to fabricate ultra-long sacrificial nanofibers with controlled dimensions and morphology, thereby imparting control over the composition and shape of the nanostructures evolved during galvanic displacement reaction. It is believed to be a general route to form various ultra-long hollow semiconducting nanofibers.
| Original language | English |
|---|---|
| Pages (from-to) | 9107-9109 |
| Number of pages | 3 |
| Journal | Chemical Communications |
| Volume | 47 |
| Issue number | 32 |
| DOIs | |
| State | Published - 28 Aug 2011 |