TY - JOUR
T1 - Ta segregation at the TiC(0 0 1) surface studied by time-of-flight impact-collision ion scattering spectroscopy
AU - Hwang, Yeon
AU - Souda, Ryutaro
AU - Hishita, Shunichi
AU - Otani, Shigeki
PY - 2001/12
Y1 - 2001/12
N2 - Tantalum was ion implanted onto the TiC(0 0 1) surface at the energy of 2 MeV with the total doping amount of 1 × 1017 atoms/cm2. After thermal treatment at 1600 °C for 300 s, the atomic structure of Ta segregation on the TiC(001) surface was investigated by using time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS). It was found that the segregated Ta atoms were located on the Ti-site. Ta atoms segregated not only to the outermost layer but had a gradual concentration decrease inwards from the surface.
AB - Tantalum was ion implanted onto the TiC(0 0 1) surface at the energy of 2 MeV with the total doping amount of 1 × 1017 atoms/cm2. After thermal treatment at 1600 °C for 300 s, the atomic structure of Ta segregation on the TiC(001) surface was investigated by using time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS). It was found that the segregated Ta atoms were located on the Ti-site. Ta atoms segregated not only to the outermost layer but had a gradual concentration decrease inwards from the surface.
KW - Impact-collision ion scattering spectroscopy
KW - Surface segregation
KW - Titanium carbide
UR - http://www.scopus.com/inward/record.url?scp=0035576871&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(01)00792-3
DO - 10.1016/S0168-583X(01)00792-3
M3 - Article
AN - SCOPUS:0035576871
SN - 0168-583X
VL - 184
SP - 555
EP - 558
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 4
ER -