Ta segregation at the TiC(0 0 1) surface studied by time-of-flight impact-collision ion scattering spectroscopy

Yeon Hwang; Ryutaro Souda; Shunichi Hishita; Shigeki Otani

doi:10.1016/S0168-583X(01)00792-3

Ta segregation at the TiC(0 0 1) surface studied by time-of-flight impact-collision ion scattering spectroscopy

Yeon Hwang
, Ryutaro Souda
, Shunichi Hishita
, Shigeki Otani

Dept. of Materials Science & Engineering

National Institute for Materials Science Tsukuba

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Tantalum was ion implanted onto the TiC(0 0 1) surface at the energy of 2 MeV with the total doping amount of 1 × 10¹⁷ atoms/cm². After thermal treatment at 1600 °C for 300 s, the atomic structure of Ta segregation on the TiC(001) surface was investigated by using time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS). It was found that the segregated Ta atoms were located on the Ti-site. Ta atoms segregated not only to the outermost layer but had a gradual concentration decrease inwards from the surface.

Original language	English
Pages (from-to)	555-558
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	184
Issue number	4
DOIs	https://doi.org/10.1016/S0168-583X(01)00792-3
State	Published - Dec 2001

Keywords

Impact-collision ion scattering spectroscopy
Surface segregation
Titanium carbide

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10.1016/S0168-583X(01)00792-3

Cite this

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title = "Ta segregation at the TiC(0 0 1) surface studied by time-of-flight impact-collision ion scattering spectroscopy",

abstract = "Tantalum was ion implanted onto the TiC(0 0 1) surface at the energy of 2 MeV with the total doping amount of 1 × 1017 atoms/cm2. After thermal treatment at 1600 °C for 300 s, the atomic structure of Ta segregation on the TiC(001) surface was investigated by using time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS). It was found that the segregated Ta atoms were located on the Ti-site. Ta atoms segregated not only to the outermost layer but had a gradual concentration decrease inwards from the surface.",

keywords = "Impact-collision ion scattering spectroscopy, Surface segregation, Titanium carbide",

author = "Yeon Hwang and Ryutaro Souda and Shunichi Hishita and Shigeki Otani",

year = "2001",

month = dec,

doi = "10.1016/S0168-583X(01)00792-3",

language = "English",

volume = "184",

pages = "555--558",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

number = "4",

}

Ta segregation at the TiC(0 0 1) surface studied by time-of-flight impact-collision ion scattering spectroscopy. / Hwang, Yeon; Souda, Ryutaro; Hishita, Shunichi et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 184, No. 4, 12.2001, p. 555-558.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Ta segregation at the TiC(0 0 1) surface studied by time-of-flight impact-collision ion scattering spectroscopy

AU - Hwang, Yeon

AU - Souda, Ryutaro

AU - Hishita, Shunichi

AU - Otani, Shigeki

PY - 2001/12

Y1 - 2001/12

N2 - Tantalum was ion implanted onto the TiC(0 0 1) surface at the energy of 2 MeV with the total doping amount of 1 × 1017 atoms/cm2. After thermal treatment at 1600 °C for 300 s, the atomic structure of Ta segregation on the TiC(001) surface was investigated by using time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS). It was found that the segregated Ta atoms were located on the Ti-site. Ta atoms segregated not only to the outermost layer but had a gradual concentration decrease inwards from the surface.

AB - Tantalum was ion implanted onto the TiC(0 0 1) surface at the energy of 2 MeV with the total doping amount of 1 × 1017 atoms/cm2. After thermal treatment at 1600 °C for 300 s, the atomic structure of Ta segregation on the TiC(001) surface was investigated by using time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS). It was found that the segregated Ta atoms were located on the Ti-site. Ta atoms segregated not only to the outermost layer but had a gradual concentration decrease inwards from the surface.

KW - Impact-collision ion scattering spectroscopy

KW - Surface segregation

KW - Titanium carbide

UR - https://www.scopus.com/pages/publications/0035576871

U2 - 10.1016/S0168-583X(01)00792-3

DO - 10.1016/S0168-583X(01)00792-3

M3 - Article

AN - SCOPUS:0035576871

SN - 0168-583X

VL - 184

SP - 555

EP - 558

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 4

ER -

Ta segregation at the TiC(0 0 1) surface studied by time-of-flight impact-collision ion scattering spectroscopy

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Keywords

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