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Tailoring the Doping Mechanisms at Oxide Interfaces in Nanoscale

  • Weitao Dai
  • , Ming Yang
  • , Hyungwoo Lee
  • , Jung Woo Lee
  • , Chang Beom Eom
  • , Cheng Cen
  • West Virginia University
  • University of Wisconsin-Madison

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Here, we demonstrate the nanoscale manipulations of two types of charge transfer to the LaAlO3/SrTiO3 interfaces: one from surface adsorbates and another from oxygen vacancies inside LaAlO3 films. This method can be used to produce multiple insulating and metallic interface states with distinct carrier properties that are highly stable in air. By reconfiguring the patterning and comparing interface structures formed from different doping sources, effects of extrinsic and intrinsic material characters on the transport properties can be distinguished. In particular, a multisubband to single-subband transition controlled by the structural phases in SrTiO3 was revealed. In addition, the transient behaviors of nanostructures also provided a unique opportunity to study the nanoscale diffusions of adsorbates and oxygen vacancies in oxide heterostructures. Knowledge of such dynamic processes is important for nanodevice implementations.

Original languageEnglish
Pages (from-to)5620-5625
Number of pages6
JournalNano Letters
Volume17
Issue number9
DOIs
StatePublished - 13 Sep 2017

Keywords

  • 2DEG
  • adsorbates
  • defects
  • diffusion
  • subband engineering

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