TY - JOUR
T1 - Te Doping Effect of InGaP in Tunnel Junction on the Performance of InGaP/InGaAs/Ge Triple-Junction Solar Cells
AU - Jung, Sang Hyun
AU - Kim, Chang Zoo
AU - Kim, Youngjo
AU - Jun, Dong Hwan
AU - Kim, Hogyoung
AU - Kang, Ho Kwan
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/4
Y1 - 2016/4
N2 - Tellurium (Te) doping of InGaP with diethyl Te (DETe) was investigated to apply for tunnel junctions (TJs) in multijunction solar cells. When the DETe flow rate was 2 sccm, the electron concentration was found to increase with decreasing growth temperature. The obtained electron concentration reached up to ∼ 1,×, 1019 cm-3. The photovoltaic (PV) properties of InGaP/InGaAs/Ge triple-junction solar cells with a Te-doped InGaP layer in TJ were measured under concentrated light condition. Here, Te-doped InGaP layers in TJ were prepared using different growth temperatures ranging from 540 °C to 660 °C. Compared with other samples, open-circuit voltage (VOC), fill factor, and conversion efficiency were higher for the sample with an InGaP grown at 570 °C. For this sample, external quantum efficiency was also found to be higher than the other samples, associated with the improved crystalline quality.
AB - Tellurium (Te) doping of InGaP with diethyl Te (DETe) was investigated to apply for tunnel junctions (TJs) in multijunction solar cells. When the DETe flow rate was 2 sccm, the electron concentration was found to increase with decreasing growth temperature. The obtained electron concentration reached up to ∼ 1,×, 1019 cm-3. The photovoltaic (PV) properties of InGaP/InGaAs/Ge triple-junction solar cells with a Te-doped InGaP layer in TJ were measured under concentrated light condition. Here, Te-doped InGaP layers in TJ were prepared using different growth temperatures ranging from 540 °C to 660 °C. Compared with other samples, open-circuit voltage (VOC), fill factor, and conversion efficiency were higher for the sample with an InGaP grown at 570 °C. For this sample, external quantum efficiency was also found to be higher than the other samples, associated with the improved crystalline quality.
KW - External quantum efficiency (EQE)
KW - InGaP
KW - tellurium (Te)
KW - tunnel junction (TJ)
UR - http://www.scopus.com/inward/record.url?scp=84959450548&partnerID=8YFLogxK
U2 - 10.1109/TED.2016.2529698
DO - 10.1109/TED.2016.2529698
M3 - Article
AN - SCOPUS:84959450548
SN - 0018-9383
VL - 63
SP - 1594
EP - 1599
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
M1 - 7416188
ER -
