Te Doping Effect of InGaP in Tunnel Junction on the Performance of InGaP/InGaAs/Ge Triple-Junction Solar Cells

Sang Hyun Jung; Chang Zoo Kim; Youngjo Kim; Dong Hwan Jun; Hogyoung Kim; Ho Kwan Kang

doi:10.1109/TED.2016.2529698

Te Doping Effect of InGaP in Tunnel Junction on the Performance of InGaP/InGaAs/Ge Triple-Junction Solar Cells

Sang Hyun Jung
, Chang Zoo Kim
, Youngjo Kim
, Dong Hwan Jun
, Hogyoung Kim
, Ho Kwan Kang

Dept. of Optometry

Korea Advanced Nano Fab Center

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Tellurium (Te) doping of InGaP with diethyl Te (DETe) was investigated to apply for tunnel junctions (TJs) in multijunction solar cells. When the DETe flow rate was 2 sccm, the electron concentration was found to increase with decreasing growth temperature. The obtained electron concentration reached up to ∼ 1,×, 10¹⁹ cm^-3. The photovoltaic (PV) properties of InGaP/InGaAs/Ge triple-junction solar cells with a Te-doped InGaP layer in TJ were measured under concentrated light condition. Here, Te-doped InGaP layers in TJ were prepared using different growth temperatures ranging from 540 °C to 660 °C. Compared with other samples, open-circuit voltage (V_OC), fill factor, and conversion efficiency were higher for the sample with an InGaP grown at 570 °C. For this sample, external quantum efficiency was also found to be higher than the other samples, associated with the improved crystalline quality.

Original language	English
Article number	7416188
Pages (from-to)	1594-1599
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	4
DOIs	https://doi.org/10.1109/TED.2016.2529698
State	Published - Apr 2016

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

External quantum efficiency (EQE)
InGaP
tellurium (Te)
tunnel junction (TJ)

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10.1109/TED.2016.2529698

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@article{6a6e4912611a44e19a4d16164ded4182,

title = "Te Doping Effect of InGaP in Tunnel Junction on the Performance of InGaP/InGaAs/Ge Triple-Junction Solar Cells",

abstract = "Tellurium (Te) doping of InGaP with diethyl Te (DETe) was investigated to apply for tunnel junctions (TJs) in multijunction solar cells. When the DETe flow rate was 2 sccm, the electron concentration was found to increase with decreasing growth temperature. The obtained electron concentration reached up to ∼ 1,×, 1019 cm-3. The photovoltaic (PV) properties of InGaP/InGaAs/Ge triple-junction solar cells with a Te-doped InGaP layer in TJ were measured under concentrated light condition. Here, Te-doped InGaP layers in TJ were prepared using different growth temperatures ranging from 540 °C to 660 °C. Compared with other samples, open-circuit voltage (VOC), fill factor, and conversion efficiency were higher for the sample with an InGaP grown at 570 °C. For this sample, external quantum efficiency was also found to be higher than the other samples, associated with the improved crystalline quality.",

keywords = "External quantum efficiency (EQE), InGaP, tellurium (Te), tunnel junction (TJ)",

author = "Jung, \{Sang Hyun\} and Kim, \{Chang Zoo\} and Youngjo Kim and Jun, \{Dong Hwan\} and Hogyoung Kim and Kang, \{Ho Kwan\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = apr,

doi = "10.1109/TED.2016.2529698",

language = "English",

volume = "63",

pages = "1594--1599",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

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}

TY - JOUR

T1 - Te Doping Effect of InGaP in Tunnel Junction on the Performance of InGaP/InGaAs/Ge Triple-Junction Solar Cells

AU - Jung, Sang Hyun

AU - Kim, Chang Zoo

AU - Kim, Youngjo

AU - Jun, Dong Hwan

AU - Kim, Hogyoung

AU - Kang, Ho Kwan

PY - 2016/4

Y1 - 2016/4

N2 - Tellurium (Te) doping of InGaP with diethyl Te (DETe) was investigated to apply for tunnel junctions (TJs) in multijunction solar cells. When the DETe flow rate was 2 sccm, the electron concentration was found to increase with decreasing growth temperature. The obtained electron concentration reached up to ∼ 1,×, 1019 cm-3. The photovoltaic (PV) properties of InGaP/InGaAs/Ge triple-junction solar cells with a Te-doped InGaP layer in TJ were measured under concentrated light condition. Here, Te-doped InGaP layers in TJ were prepared using different growth temperatures ranging from 540 °C to 660 °C. Compared with other samples, open-circuit voltage (VOC), fill factor, and conversion efficiency were higher for the sample with an InGaP grown at 570 °C. For this sample, external quantum efficiency was also found to be higher than the other samples, associated with the improved crystalline quality.

AB - Tellurium (Te) doping of InGaP with diethyl Te (DETe) was investigated to apply for tunnel junctions (TJs) in multijunction solar cells. When the DETe flow rate was 2 sccm, the electron concentration was found to increase with decreasing growth temperature. The obtained electron concentration reached up to ∼ 1,×, 1019 cm-3. The photovoltaic (PV) properties of InGaP/InGaAs/Ge triple-junction solar cells with a Te-doped InGaP layer in TJ were measured under concentrated light condition. Here, Te-doped InGaP layers in TJ were prepared using different growth temperatures ranging from 540 °C to 660 °C. Compared with other samples, open-circuit voltage (VOC), fill factor, and conversion efficiency were higher for the sample with an InGaP grown at 570 °C. For this sample, external quantum efficiency was also found to be higher than the other samples, associated with the improved crystalline quality.

KW - External quantum efficiency (EQE)

KW - InGaP

KW - tellurium (Te)

KW - tunnel junction (TJ)

UR - https://www.scopus.com/pages/publications/84959450548

U2 - 10.1109/TED.2016.2529698

DO - 10.1109/TED.2016.2529698

M3 - Article

AN - SCOPUS:84959450548

SN - 0018-9383

VL - 63

SP - 1594

EP - 1599

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

M1 - 7416188

ER -

Te Doping Effect of InGaP in Tunnel Junction on the Performance of InGaP/InGaAs/Ge Triple-Junction Solar Cells

Abstract

UN SDGs

Keywords

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