Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Ho Kwan Kang; Sang Hyuk Park; Dong Hwan Jun; Chang Zoo Kim; Keun Man Song; Wonkyu Park; Chul Gi Ko; Hogyoung Kim

doi:10.1088/0268-1242/26/7/075009

Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Ho Kwan Kang, Sang Hyuk Park, Dong Hwan Jun, Chang Zoo Kim, Keun Man Song, Wonkyu Park, Chul Gi Ko, Hogyoung Kim

Dept. of Optometry

Korea Advanced Nano Fab Center

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Heavily tellurium (Te)-doped GaAs layers with diethyltellurium (DETe) grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The existence of Te-rich microprecipitates might degrade both the electrical and optical properties. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance. A comparative study using both Si and Te doping in the GaAs tunnel junction of GaInP/GaAs tandem solar cells showed a higher efficiency for Te doping. Therefore, the GaAs tunnel junction with Te doping can be considered to improve the device performance of GaAs-based multi-junction solar cells.

Original language	English
Article number	075009
Journal	Semiconductor Science and Technology
Volume	26
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/26/7/075009
State	Published - 7 Jul 2011

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title = "Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells",

abstract = "Heavily tellurium (Te)-doped GaAs layers with diethyltellurium (DETe) grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The existence of Te-rich microprecipitates might degrade both the electrical and optical properties. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance. A comparative study using both Si and Te doping in the GaAs tunnel junction of GaInP/GaAs tandem solar cells showed a higher efficiency for Te doping. Therefore, the GaAs tunnel junction with Te doping can be considered to improve the device performance of GaAs-based multi-junction solar cells.",

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T1 - Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

AU - Kang, Ho Kwan

AU - Park, Sang Hyuk

AU - Jun, Dong Hwan

AU - Kim, Chang Zoo

AU - Song, Keun Man

AU - Park, Wonkyu

AU - Ko, Chul Gi

AU - Kim, Hogyoung

PY - 2011/7/7

Y1 - 2011/7/7

N2 - Heavily tellurium (Te)-doped GaAs layers with diethyltellurium (DETe) grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The existence of Te-rich microprecipitates might degrade both the electrical and optical properties. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance. A comparative study using both Si and Te doping in the GaAs tunnel junction of GaInP/GaAs tandem solar cells showed a higher efficiency for Te doping. Therefore, the GaAs tunnel junction with Te doping can be considered to improve the device performance of GaAs-based multi-junction solar cells.

AB - Heavily tellurium (Te)-doped GaAs layers with diethyltellurium (DETe) grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The existence of Te-rich microprecipitates might degrade both the electrical and optical properties. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance. A comparative study using both Si and Te doping in the GaAs tunnel junction of GaInP/GaAs tandem solar cells showed a higher efficiency for Te doping. Therefore, the GaAs tunnel junction with Te doping can be considered to improve the device performance of GaAs-based multi-junction solar cells.

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SN - 0268-1242

VL - 26

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

M1 - 075009

ER -

Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Abstract

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