Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Ho Kwan Kang; Sang Hyuk Park; Dong Hwan Jun; Chang Zoo Kim; Keun Man Song; Wonkyu Park; Chul Gi Ko; Hogyoung Kim

doi:10.1088/0268-1242/26/7/075009

Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Ho Kwan Kang
, Sang Hyuk Park
, Dong Hwan Jun
, Chang Zoo Kim
, Keun Man Song
, Wonkyu Park
, Chul Gi Ko
, Hogyoung Kim

Dept. of Optometry

Korea Advanced Nano Fab Center

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Heavily tellurium (Te)-doped GaAs layers with diethyltellurium (DETe) grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The existence of Te-rich microprecipitates might degrade both the electrical and optical properties. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance. A comparative study using both Si and Te doping in the GaAs tunnel junction of GaInP/GaAs tandem solar cells showed a higher efficiency for Te doping. Therefore, the GaAs tunnel junction with Te doping can be considered to improve the device performance of GaAs-based multi-junction solar cells.

Original language	English
Article number	075009
Journal	Semiconductor Science and Technology
Volume	26
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/26/7/075009
State	Published - 7 Jul 2011

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SDG 7 Affordable and Clean Energy

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10.1088/0268-1242/26/7/075009

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@article{d2a2b06d5e834a27ba4681e05d403c61,

title = "Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells",

abstract = "Heavily tellurium (Te)-doped GaAs layers with diethyltellurium (DETe) grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The existence of Te-rich microprecipitates might degrade both the electrical and optical properties. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance. A comparative study using both Si and Te doping in the GaAs tunnel junction of GaInP/GaAs tandem solar cells showed a higher efficiency for Te doping. Therefore, the GaAs tunnel junction with Te doping can be considered to improve the device performance of GaAs-based multi-junction solar cells.",

author = "Kang, \{Ho Kwan\} and Park, \{Sang Hyuk\} and Jun, \{Dong Hwan\} and Kim, \{Chang Zoo\} and Song, \{Keun Man\} and Wonkyu Park and Ko, \{Chul Gi\} and Hogyoung Kim",

year = "2011",

month = jul,

day = "7",

doi = "10.1088/0268-1242/26/7/075009",

language = "English",

volume = "26",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

number = "7",

}

TY - JOUR

T1 - Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

AU - Kang, Ho Kwan

AU - Park, Sang Hyuk

AU - Jun, Dong Hwan

AU - Kim, Chang Zoo

AU - Song, Keun Man

AU - Park, Wonkyu

AU - Ko, Chul Gi

AU - Kim, Hogyoung

PY - 2011/7/7

Y1 - 2011/7/7

N2 - Heavily tellurium (Te)-doped GaAs layers with diethyltellurium (DETe) grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The existence of Te-rich microprecipitates might degrade both the electrical and optical properties. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance. A comparative study using both Si and Te doping in the GaAs tunnel junction of GaInP/GaAs tandem solar cells showed a higher efficiency for Te doping. Therefore, the GaAs tunnel junction with Te doping can be considered to improve the device performance of GaAs-based multi-junction solar cells.

AB - Heavily tellurium (Te)-doped GaAs layers with diethyltellurium (DETe) grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The existence of Te-rich microprecipitates might degrade both the electrical and optical properties. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance. A comparative study using both Si and Te doping in the GaAs tunnel junction of GaInP/GaAs tandem solar cells showed a higher efficiency for Te doping. Therefore, the GaAs tunnel junction with Te doping can be considered to improve the device performance of GaAs-based multi-junction solar cells.

UR - https://www.scopus.com/pages/publications/79953868430

U2 - 10.1088/0268-1242/26/7/075009

DO - 10.1088/0268-1242/26/7/075009

M3 - Article

AN - SCOPUS:79953868430

SN - 0268-1242

VL - 26

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

M1 - 075009

ER -

Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Abstract

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