Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor

R. Jansen; R. Vlutters; P. S. Anil Kumar; O. M.J. van 't Erve; S. D. Kim; J. C. Lodder

doi:10.1016/S0304-8853(00)00772-1

Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor

R. Jansen, R. Vlutters, P. S. Anil Kumar, O. M.J. van 't Erve, S. D. Kim, J. C. Lodder

Dept. of Mechanical System and Design Engineering

University of Twente

Research output: Contribution to journal › Article › peer-review

Abstract

Spin-dependent transport of hot electrons across a spin valve has been studied as function of temperature using a spin-valve transistor with a soft Ni₈₀Fe₂₀/Au/Co spin-valve base. Spin-dependent scattering makes the collector current highly sensitive to small magnetic fields that change the magnetic state of the base. The magnetocurrent approaches 400% at 100 K but decays to about 240% at room temperature. The reduction is attributed to mixing of the two spin channels due to spin-flip scattering of hot electrons by thermal spin waves.

Original language	English
Pages (from-to)	658-660
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	226-230
DOIs	https://doi.org/10.1016/S0304-8853(00)00772-1
State	Published - 2001

Keywords

Semiconductors
Spin valve
Spin waves
Spin-dependent scattering

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10.1016/S0304-8853(00)00772-1

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title = "Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor",

abstract = "Spin-dependent transport of hot electrons across a spin valve has been studied as function of temperature using a spin-valve transistor with a soft Ni80Fe20/Au/Co spin-valve base. Spin-dependent scattering makes the collector current highly sensitive to small magnetic fields that change the magnetic state of the base. The magnetocurrent approaches 400\% at 100 K but decays to about 240\% at room temperature. The reduction is attributed to mixing of the two spin channels due to spin-flip scattering of hot electrons by thermal spin waves.",

keywords = "Semiconductors, Spin valve, Spin waves, Spin-dependent scattering",

author = "R. Jansen and R. Vlutters and \{Anil Kumar\}, \{P. S.\} and \{van 't Erve\}, \{O. M.J.\} and Kim, \{S. D.\} and Lodder, \{J. C.\}",

year = "2001",

doi = "10.1016/S0304-8853(00)00772-1",

language = "English",

volume = "226-230",

pages = "658--660",

journal = "Journal of Magnetism and Magnetic Materials",

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TY - JOUR

T1 - Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor

AU - Jansen, R.

AU - Vlutters, R.

AU - Anil Kumar, P. S.

AU - van 't Erve, O. M.J.

AU - Kim, S. D.

AU - Lodder, J. C.

PY - 2001

Y1 - 2001

N2 - Spin-dependent transport of hot electrons across a spin valve has been studied as function of temperature using a spin-valve transistor with a soft Ni80Fe20/Au/Co spin-valve base. Spin-dependent scattering makes the collector current highly sensitive to small magnetic fields that change the magnetic state of the base. The magnetocurrent approaches 400% at 100 K but decays to about 240% at room temperature. The reduction is attributed to mixing of the two spin channels due to spin-flip scattering of hot electrons by thermal spin waves.

AB - Spin-dependent transport of hot electrons across a spin valve has been studied as function of temperature using a spin-valve transistor with a soft Ni80Fe20/Au/Co spin-valve base. Spin-dependent scattering makes the collector current highly sensitive to small magnetic fields that change the magnetic state of the base. The magnetocurrent approaches 400% at 100 K but decays to about 240% at room temperature. The reduction is attributed to mixing of the two spin channels due to spin-flip scattering of hot electrons by thermal spin waves.

KW - Semiconductors

KW - Spin valve

KW - Spin waves

KW - Spin-dependent scattering

UR - http://www.scopus.com/inward/record.url?scp=78049359851&partnerID=8YFLogxK

U2 - 10.1016/S0304-8853(00)00772-1

DO - 10.1016/S0304-8853(00)00772-1

M3 - Article

AN - SCOPUS:78049359851

SN - 0304-8853

VL - 226-230

SP - 658

EP - 660

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -

Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor

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Keywords

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