The effects of growth temperature and substrate tilt angle on GaInP/GaAs tandem solar cells

Dong Hwan Jun; Chang Zoo Kim; Hogyoung Kim; Hyun Beom Shin; Ho Kwan Kang; Won Kyu Park; Kisoo Shin; Chul Gi Ko

doi:10.5573/JSTS.2009.9.2.091

The effects of growth temperature and substrate tilt angle on GaInP/GaAs tandem solar cells

Dong Hwan Jun, Chang Zoo Kim, Hogyoung Kim, Hyun Beom Shin, Ho Kwan Kang, Won Kyu Park, Kisoo Shin, Chul Gi Ko

Dept. of Optometry

Korea Advanced Nano Fab Center

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680 °C and 700 °C on n-type GaAs (100) substrate with 2° and 6° tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.

Original language	English
Pages (from-to)	91-97
Number of pages	7
Journal	Journal of Semiconductor Technology and Science
Volume	9
Issue number	2
DOIs	https://doi.org/10.5573/JSTS.2009.9.2.091
State	Published - Jun 2009

Keywords

GaAs compound semiconductor
Solar cell
Tandem solar cell

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.5573/JSTS.2009.9.2.091

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@article{996fbbf9345740f68c77caca734acc6a,

title = "The effects of growth temperature and substrate tilt angle on GaInP/GaAs tandem solar cells",

abstract = "The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680 °C and 700 °C on n-type GaAs (100) substrate with 2° and 6° tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58\% efficiency.",

keywords = "GaAs compound semiconductor, Solar cell, Tandem solar cell",

author = "Jun, \{Dong Hwan\} and Kim, \{Chang Zoo\} and Hogyoung Kim and Shin, \{Hyun Beom\} and Kang, \{Ho Kwan\} and Park, \{Won Kyu\} and Kisoo Shin and Ko, \{Chul Gi\}",

year = "2009",

month = jun,

doi = "10.5573/JSTS.2009.9.2.091",

language = "English",

volume = "9",

pages = "91--97",

journal = "Journal of Semiconductor Technology and Science",

issn = "1598-1657",

number = "2",

}

TY - JOUR

T1 - The effects of growth temperature and substrate tilt angle on GaInP/GaAs tandem solar cells

AU - Jun, Dong Hwan

AU - Kim, Chang Zoo

AU - Kim, Hogyoung

AU - Shin, Hyun Beom

AU - Kang, Ho Kwan

AU - Park, Won Kyu

AU - Shin, Kisoo

AU - Ko, Chul Gi

PY - 2009/6

Y1 - 2009/6

N2 - The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680 °C and 700 °C on n-type GaAs (100) substrate with 2° and 6° tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.

AB - The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680 °C and 700 °C on n-type GaAs (100) substrate with 2° and 6° tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.

KW - GaAs compound semiconductor

KW - Solar cell

KW - Tandem solar cell

UR - http://www.scopus.com/inward/record.url?scp=70349445471&partnerID=8YFLogxK

U2 - 10.5573/JSTS.2009.9.2.091

DO - 10.5573/JSTS.2009.9.2.091

M3 - Article

AN - SCOPUS:70349445471

SN - 1598-1657

VL - 9

SP - 91

EP - 97

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 2

ER -

The effects of growth temperature and substrate tilt angle on GaInP/GaAs tandem solar cells

Abstract

Keywords

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