TY - JOUR
T1 - The effects of heat treatment on room temperature ferromagnetism in a digitally Co doped ZnO thin film
AU - Kang, Sung geun
AU - Kim, Youngrae
AU - Kim, Sarah Eunkyung
AU - Kim, Sungdong
PY - 2013/1
Y1 - 2013/1
N2 - The effects of heat treatment on room temperature ferromagnetism of Co-doped ZnO were investigated with a (ZnO 20Å/Co x Å)20 multilayer structure where x = 1. 5, 3, 4. 3, 6 and 9 Å. As the thickness of the Co sub-layer increased, the ZnO/Co multilayer changed its magnetic state from diamagnetism at Co 1. 5 Å and 3 Å to weak ferromagnetism at Co 4. 3 Å and strong ferromagnetism at Co 6 Å and 9 Å. The heat treatment, in a vacuum at 400°C, changed the diamagnetic property into a ferromagnetic one, resulting in room temperature ferromagnetism for all Co sub-layer thicknesses. The improvement in ferromagnetism could be ascribed to the exchange coupling between dispersed Co atoms through XRD, optical transmittance and TEM analysis.
AB - The effects of heat treatment on room temperature ferromagnetism of Co-doped ZnO were investigated with a (ZnO 20Å/Co x Å)20 multilayer structure where x = 1. 5, 3, 4. 3, 6 and 9 Å. As the thickness of the Co sub-layer increased, the ZnO/Co multilayer changed its magnetic state from diamagnetism at Co 1. 5 Å and 3 Å to weak ferromagnetism at Co 4. 3 Å and strong ferromagnetism at Co 6 Å and 9 Å. The heat treatment, in a vacuum at 400°C, changed the diamagnetic property into a ferromagnetic one, resulting in room temperature ferromagnetism for all Co sub-layer thicknesses. The improvement in ferromagnetism could be ascribed to the exchange coupling between dispersed Co atoms through XRD, optical transmittance and TEM analysis.
KW - cobalt
KW - dilute magnetic semiconductor
KW - doping
KW - ferromagnetism
KW - multilayer
KW - zinc oxide
UR - https://www.scopus.com/pages/publications/84872821730
U2 - 10.1007/s13391-012-1094-2
DO - 10.1007/s13391-012-1094-2
M3 - Article
AN - SCOPUS:84872821730
SN - 1738-8090
VL - 9
SP - 7
EP - 11
JO - Electronic Materials Letters
JF - Electronic Materials Letters
IS - 1
ER -