The properties of ZrO2 film deposition by ALD at low temperature

Byung Chan Yang; Jeong Woo Shin; Hyuk Dong Kwon; Jihwan An

doi:10.7736/KSPE.2017.34.10.735

The properties of ZrO₂ film deposition by ALD at low temperature

Byung Chan Yang, Jeong Woo Shin, Hyuk Dong Kwon, Jihwan An

Dept. of Manufacturing Systems and Design Engineering

Seoul National University of Science and Technology (SNUST)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

ZrO₂ film is widely used for high-k applications and also has good mechanical properties. This paper covers the study of the properties of ZrO₂ film deposited by atomic layer deposition (ALD) using TEMA Zr and water in the temperature range of 110 to 250oC for potential application in flexible-device fabrication. At a low deposition temperature, ALD ZrO₂ films showed a uniform growth rate of ~1 å per cycle, good uniformity, partial crystallinity, and smooth surface. ZrO₂ can also be deposited on the trench structure with a high aspect ratio (~1:50), but conformality needs to be improved for practical applications.

Original language	English
Pages (from-to)	735-738
Number of pages	4
Journal	Journal of the Korean Society for Precision Engineering
Volume	34
Issue number	10
DOIs	https://doi.org/10.7736/KSPE.2017.34.10.735
State	Published - Oct 2017

Keywords

Atomic layer deposition
Low-temperature deposition
Thin film
ZrO

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10.7736/KSPE.2017.34.10.735

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title = "The properties of ZrO2 film deposition by ALD at low temperature",

abstract = "ZrO2 film is widely used for high-k applications and also has good mechanical properties. This paper covers the study of the properties of ZrO2 film deposited by atomic layer deposition (ALD) using TEMA Zr and water in the temperature range of 110 to 250oC for potential application in flexible-device fabrication. At a low deposition temperature, ALD ZrO2 films showed a uniform growth rate of \textasciitilde{}1 {\aa} per cycle, good uniformity, partial crystallinity, and smooth surface. ZrO2 can also be deposited on the trench structure with a high aspect ratio (\textasciitilde{}1:50), but conformality needs to be improved for practical applications.",

keywords = "Atomic layer deposition, Low-temperature deposition, Thin film, ZrO",

author = "Yang, \{Byung Chan\} and Shin, \{Jeong Woo\} and Kwon, \{Hyuk Dong\} and Jihwan An",

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doi = "10.7736/KSPE.2017.34.10.735",

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AU - Yang, Byung Chan

AU - Shin, Jeong Woo

AU - Kwon, Hyuk Dong

AU - An, Jihwan

PY - 2017/10

Y1 - 2017/10

N2 - ZrO2 film is widely used for high-k applications and also has good mechanical properties. This paper covers the study of the properties of ZrO2 film deposited by atomic layer deposition (ALD) using TEMA Zr and water in the temperature range of 110 to 250oC for potential application in flexible-device fabrication. At a low deposition temperature, ALD ZrO2 films showed a uniform growth rate of ~1 å per cycle, good uniformity, partial crystallinity, and smooth surface. ZrO2 can also be deposited on the trench structure with a high aspect ratio (~1:50), but conformality needs to be improved for practical applications.

AB - ZrO2 film is widely used for high-k applications and also has good mechanical properties. This paper covers the study of the properties of ZrO2 film deposited by atomic layer deposition (ALD) using TEMA Zr and water in the temperature range of 110 to 250oC for potential application in flexible-device fabrication. At a low deposition temperature, ALD ZrO2 films showed a uniform growth rate of ~1 å per cycle, good uniformity, partial crystallinity, and smooth surface. ZrO2 can also be deposited on the trench structure with a high aspect ratio (~1:50), but conformality needs to be improved for practical applications.

KW - Atomic layer deposition

KW - Low-temperature deposition

KW - Thin film

KW - ZrO

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JO - Journal of the Korean Society for Precision Engineering

JF - Journal of the Korean Society for Precision Engineering

IS - 10

ER -

The properties of ZrO₂ film deposition by ALD at low temperature

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Keywords

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