TY - GEN
T1 - The Role of Preparation and Bonding Parameters in Improving Hybrid Bonding Quality
AU - Kim, Injoo
AU - Lee, Siye
AU - Kang, Minji
AU - Jang, Jinho
AU - Jin, Hyein
AU - Kim, Sungdong
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - Hybrid bonding is a technique for the simultaneous bonding of Cu and dielectric surfaces bonding mechanisms, and it is important to perform appropriate surface treatments to prevent damage to both interfaces. In this study, O2, N2, and forming gas (95% Ar, 5% H2) plasma treatments were applied to improve SiO2 bonding quality while reducing Cu surface damage, and bonding was performed under different bonding conditions. After bonding, the bonding area was confirmed by SAT, and the bond strength was evaluated by pull test and DCB test. The results showed that the bonding area was the largest when O2 gas was used, and the bond strength was the most enhanced when N2 gas was treated. It was also determined that the pressure applied during the initial bonding step improved the bond area, and subsequent annealing further improved the bond area and bond strength. In addition, O2 plasma treatment of the Cu surface produced CuO, which was treated with NH4OH to remove it. XPS verified that the CuO was removed, and SEM and SAT analyses confirmed that the bond interface quality was improved.
AB - Hybrid bonding is a technique for the simultaneous bonding of Cu and dielectric surfaces bonding mechanisms, and it is important to perform appropriate surface treatments to prevent damage to both interfaces. In this study, O2, N2, and forming gas (95% Ar, 5% H2) plasma treatments were applied to improve SiO2 bonding quality while reducing Cu surface damage, and bonding was performed under different bonding conditions. After bonding, the bonding area was confirmed by SAT, and the bond strength was evaluated by pull test and DCB test. The results showed that the bonding area was the largest when O2 gas was used, and the bond strength was the most enhanced when N2 gas was treated. It was also determined that the pressure applied during the initial bonding step improved the bond area, and subsequent annealing further improved the bond area and bond strength. In addition, O2 plasma treatment of the Cu surface produced CuO, which was treated with NH4OH to remove it. XPS verified that the CuO was removed, and SEM and SAT analyses confirmed that the bond interface quality was improved.
KW - Cu/Dielectric bonding
KW - plasma treatment bonding strength
UR - https://www.scopus.com/pages/publications/105010585242
U2 - 10.1109/ECTC51687.2025.00311
DO - 10.1109/ECTC51687.2025.00311
M3 - Conference contribution
AN - SCOPUS:105010585242
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1827
EP - 1831
BT - Proceedings - IEEE 75th Electronic Components and Technology Conference, ECTC 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 75th IEEE Electronic Components and Technology Conference, ECTC 2025
Y2 - 27 May 2025 through 30 May 2025
ER -