The spin-valve transistor: Fabrication, characterization, and physics (invited)

R. Jansen; O. M.J. Van 'T Erve; S. D. Kim; R. Vlutters; P. S. Anil Kumar; J. C. Lodder

doi:10.1063/1.1357857

The spin-valve transistor: Fabrication, characterization, and physics (invited)

R. Jansen
, O. M.J. Van 'T Erve
, S. D. Kim
, R. Vlutters
, P. S. Anil Kumar
, J. C. Lodder

Dept. of Mechanical System and Design Engineering

University of Twente

Research output: Contribution to journal › Conference article › peer-review

24 Scopus citations

Abstract

An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.

Original language	English
Pages (from-to)	7431-7436
Number of pages	6
Journal	Journal of Applied Physics
Volume	89
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1357857
State	Published - 1 Jun 2001
Event	8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States Duration: 7 Jan 2001 → 11 Jan 2001

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10.1063/1.1357857

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title = "The spin-valve transistor: Fabrication, characterization, and physics (invited)",

abstract = "An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.",

author = "R. Jansen and \{Van 'T Erve\}, \{O. M.J.\} and Kim, \{S. D.\} and R. Vlutters and \{Anil Kumar\}, \{P. S.\} and Lodder, \{J. C.\}",

year = "2001",

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doi = "10.1063/1.1357857",

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volume = "89",

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T1 - The spin-valve transistor

T2 - 8th Joint Magnetism and Magnetic Materials-Intermag Conference

AU - Jansen, R.

AU - Van 'T Erve, O. M.J.

AU - Kim, S. D.

AU - Vlutters, R.

AU - Anil Kumar, P. S.

AU - Lodder, J. C.

PY - 2001/6/1

Y1 - 2001/6/1

N2 - An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.

AB - An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.

UR - https://www.scopus.com/pages/publications/0035356095

U2 - 10.1063/1.1357857

DO - 10.1063/1.1357857

M3 - Conference article

AN - SCOPUS:0035356095

SN - 0021-8979

VL - 89

SP - 7431

EP - 7436

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 II

Y2 - 7 January 2001 through 11 January 2001

ER -

The spin-valve transistor: Fabrication, characterization, and physics (invited)

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