Thermal atomic layer deposition of In ₂ O ₃ thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H ₂ O

Indium oxide (In ₂ O ₃ ) thin films were deposited by atomic layer deposition using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me ₂ In(EDPA)) and H ₂ O as the In-precursor and reactant, respectively. The In ₂ O ₃ films exhibited a saturated growth rate of 0.083 nm/cycle at a deposition temperature of 300 °C. Porous and amorphous films were grown at 150 °C, whereas dense polycrystalline films were deposited at higher deposition temperatures of 200–300 °C. XPS analysis revealed negligible carbon and nitrogen impurities incorporation within the films. The estimated bandgap of the In ₂ O ₃ films by spectroscopic ellipsometry and UV–vis spectroscopy was about 3.7 eV and the increase in refractive index with deposition temperature from 150 to 300 °C indicated that dense films were grown at higher temperatures. The high transmittance (>94% in visible light) and good electrical properties (resistivity ∼1.2–7 mΩ cm, Hall mobility ∼28–66 cm ² /V s) of the In ₂ O ₃ films make them a viable option for optoelectronic applications.