TY - JOUR
T1 - Thermal effect on characteristics of IZTO thin films deposited by pulsed DC magnetron sputtering
AU - Son, Dong Jin
AU - Ko, Yoon Duk
AU - Jung, Dong Geun
AU - Boo, Jin Hyo
AU - Choa, Sung Hoon
AU - Kim, Young Sung
PY - 2011/3/20
Y1 - 2011/3/20
N2 - This study examined In-Zn-Sn-O (IZTO) films deposited on glass substrates by pulsed DC magnetron sputtering with various substrate temperatures. The structural, electrical, optical properties were analyzed. Xray diffraction showed that the IZTO films prepared at temperatures > 150 °C were crystalline which adversely affected the electrical properties. Amorphous IZTO films prepared at 100 °C showed the best properties, such as a low resistivity, high transmittance, figure of merit, and high work function of 4.07 ×10-4 Ω, 85%, 10.57 ×10-3 Ω-1, and 5.37 eV, respectively. This suggests that amorphous IZTO films deposited at relatively low substrate temperatures (100 °C) are suitable for electrode applications, such as OLEDs as a substitute for\ conventional crystallized ITO films.
AB - This study examined In-Zn-Sn-O (IZTO) films deposited on glass substrates by pulsed DC magnetron sputtering with various substrate temperatures. The structural, electrical, optical properties were analyzed. Xray diffraction showed that the IZTO films prepared at temperatures > 150 °C were crystalline which adversely affected the electrical properties. Amorphous IZTO films prepared at 100 °C showed the best properties, such as a low resistivity, high transmittance, figure of merit, and high work function of 4.07 ×10-4 Ω, 85%, 10.57 ×10-3 Ω-1, and 5.37 eV, respectively. This suggests that amorphous IZTO films deposited at relatively low substrate temperatures (100 °C) are suitable for electrode applications, such as OLEDs as a substitute for\ conventional crystallized ITO films.
KW - IZTO (indium zinc tin oxide)
KW - Pulsed dc magnetron sputter
KW - Substrate temperature
KW - TCO (transparent conducting oxide)
UR - https://www.scopus.com/pages/publications/79953252294
U2 - 10.5012/bkcs.2011.32.3.847
DO - 10.5012/bkcs.2011.32.3.847
M3 - Article
AN - SCOPUS:79953252294
SN - 0253-2964
VL - 32
SP - 847
EP - 851
JO - Bulletin of the Korean Chemical Society
JF - Bulletin of the Korean Chemical Society
IS - 3
ER -