Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes

Ja Yeon Kim; Seok In Na; Ga Young Ha; Min Ki Kwon; Il Kyu Park; Jae Hong Lim; Seong Ju Park; Min Ho Kim; Dongyoul Choi; Kyeongik Min

doi:10.1063/1.2168264

Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes

Ja Yeon Kim, Seok In Na, Ga Young Ha, Min Ki Kwon, Il Kyu Park, Jae Hong Lim, Seong Ju Park, Min Ho Kim, Dongyoul Choi, Kyeongik Min

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

122 Scopus citations

Abstract

The properties of a AgAl alloy reflector layer deposited on a p -GaN layer for use in high-efficiency GaN flip-chip light-emitting diodes (FCLEDs) were investigated. The AgAl layer showed good adhesion properties compared to a layer of Ag on p -GaN. In addition, no agglomeration was found, indicating that the AgAl layer is thermally stable due to the formation of oxidized Al on the surface and at the interface of the AgAl layer. The InGaNGaN multiquantum well light-emitting diode with the annealed AgAl layer showed good I-V characteristic and an enhanced optical output power compared to that with an annealed Ag layer due to the high reflectivity (86.7% at 465 nm), smooth surface after annealing, and good Ohmic property of AgAl. These results clearly indicate that a AgAl layer on p -GaN constitutes a promising reflector and Ohmic scheme for achieving high-brightness FCLEDs.

Original language	English
Article number	043507
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	4
DOIs	https://doi.org/10.1063/1.2168264
State	Published - 2006

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@article{21806be9d27a44d1869a8931e9c53b5b,

title = "Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes",

abstract = "The properties of a AgAl alloy reflector layer deposited on a p -GaN layer for use in high-efficiency GaN flip-chip light-emitting diodes (FCLEDs) were investigated. The AgAl layer showed good adhesion properties compared to a layer of Ag on p -GaN. In addition, no agglomeration was found, indicating that the AgAl layer is thermally stable due to the formation of oxidized Al on the surface and at the interface of the AgAl layer. The InGaNGaN multiquantum well light-emitting diode with the annealed AgAl layer showed good I-V characteristic and an enhanced optical output power compared to that with an annealed Ag layer due to the high reflectivity (86.7\% at 465 nm), smooth surface after annealing, and good Ohmic property of AgAl. These results clearly indicate that a AgAl layer on p -GaN constitutes a promising reflector and Ohmic scheme for achieving high-brightness FCLEDs.",

author = "Kim, \{Ja Yeon\} and Na, \{Seok In\} and Ha, \{Ga Young\} and Kwon, \{Min Ki\} and Park, \{Il Kyu\} and Lim, \{Jae Hong\} and Park, \{Seong Ju\} and Kim, \{Min Ho\} and Dongyoul Choi and Kyeongik Min",

year = "2006",

doi = "10.1063/1.2168264",

language = "English",

volume = "88",

pages = "1--3",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes

AU - Kim, Ja Yeon

AU - Na, Seok In

AU - Ha, Ga Young

AU - Kwon, Min Ki

AU - Park, Il Kyu

AU - Lim, Jae Hong

AU - Park, Seong Ju

AU - Kim, Min Ho

AU - Choi, Dongyoul

AU - Min, Kyeongik

PY - 2006

Y1 - 2006

N2 - The properties of a AgAl alloy reflector layer deposited on a p -GaN layer for use in high-efficiency GaN flip-chip light-emitting diodes (FCLEDs) were investigated. The AgAl layer showed good adhesion properties compared to a layer of Ag on p -GaN. In addition, no agglomeration was found, indicating that the AgAl layer is thermally stable due to the formation of oxidized Al on the surface and at the interface of the AgAl layer. The InGaNGaN multiquantum well light-emitting diode with the annealed AgAl layer showed good I-V characteristic and an enhanced optical output power compared to that with an annealed Ag layer due to the high reflectivity (86.7% at 465 nm), smooth surface after annealing, and good Ohmic property of AgAl. These results clearly indicate that a AgAl layer on p -GaN constitutes a promising reflector and Ohmic scheme for achieving high-brightness FCLEDs.

AB - The properties of a AgAl alloy reflector layer deposited on a p -GaN layer for use in high-efficiency GaN flip-chip light-emitting diodes (FCLEDs) were investigated. The AgAl layer showed good adhesion properties compared to a layer of Ag on p -GaN. In addition, no agglomeration was found, indicating that the AgAl layer is thermally stable due to the formation of oxidized Al on the surface and at the interface of the AgAl layer. The InGaNGaN multiquantum well light-emitting diode with the annealed AgAl layer showed good I-V characteristic and an enhanced optical output power compared to that with an annealed Ag layer due to the high reflectivity (86.7% at 465 nm), smooth surface after annealing, and good Ohmic property of AgAl. These results clearly indicate that a AgAl layer on p -GaN constitutes a promising reflector and Ohmic scheme for achieving high-brightness FCLEDs.

UR - https://www.scopus.com/pages/publications/31544448332

U2 - 10.1063/1.2168264

DO - 10.1063/1.2168264

M3 - Article

AN - SCOPUS:31544448332

SN - 0003-6951

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043507

ER -

Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes

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