Transfer ratio of the spin-valve transistor

O. M.J. Vant Erve; R. Vlutters; P. S.Anil Kumar; S. D. Kim; F. M. Postma; R. Jansen; J. C. Lodder

doi:10.1063/1.1480889

Transfer ratio of the spin-valve transistor

O. M.J. Vant Erve, R. Vlutters, P. S.Anil Kumar, S. D. Kim, F. M. Postma, R. Jansen, J. C. Lodder

Dept. of Mechanical System and Design Engineering

University of Twente

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni ₈₀Fe₂₀/Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.

Original language	English
Pages (from-to)	3787-3789
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	20
DOIs	https://doi.org/10.1063/1.1480889
State	Published - 20 May 2002

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abstract = "We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80Fe20/Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.",

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AU - Vant Erve, O. M.J.

AU - Vlutters, R.

AU - Kumar, P. S.Anil

AU - Kim, S. D.

AU - Postma, F. M.

AU - Jansen, R.

AU - Lodder, J. C.

PY - 2002/5/20

Y1 - 2002/5/20

N2 - We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80Fe20/Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.

AB - We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80Fe20/Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.

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VL - 80

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EP - 3789

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Transfer ratio of the spin-valve transistor

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